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Search Publications by: Neil M. Zimmerman (Assoc)

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Displaying 51 - 75 of 161

Dephasing of Si singlet-triplet qubits due to charge and spin defects

June 14, 2013
Author(s)
Dimitrie Culcer, Neil M. Zimmerman
We study the effect of charge and spin noise on singlet-triplet qubits in Si quantum dots. We set up a theoretical framework aimed at enabling experiment to efficiently identify the most deleterious defects, and complement it with the knowledge of defects

Determining the Location and Cause of Unintentional Quantum Dots in a Nanowire

March 21, 2012
Author(s)
Ted C. Thorbeck, Neil M. Zimmerman
Unintentional quantum dots are a common problem for single electron devices in both silicon and carbon. To determine the cause of these dots it is helpful to know their size and location. Because each dot is capacitively coupled to multiple gates, we can

Impossibility of a pure resistance measurement: The charge-pileup model

September 30, 2010
Author(s)
Neil M. Zimmerman, Denis Mamaluy
Recently, we have experimentally demonstrated the existence of a capacitance between conductors, in the absence of an insulator. We show that a combination of current continuity and Poisson's equation leads to a charge pileup, and thus a capacitance

Quantum electrical standards

August 2, 2010
Author(s)
Neil M. Zimmerman
The ampere and other electrical units defined by international agreement are presently established through challenging experiments. A redefinition of those units based on quantum laws would enable a simpler and more reliable realization.

Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability

August 7, 2008
Author(s)
Neil M. Zimmerman, W H. Huber, Brian J. Simonds, Emmanouel S. Hourdakis, Fujiwara Fujiwara, Yukinori Ono, Yasuo Takahashi, Hiroshi Inokawa, Miha Furlan, Mark W. Keller
A common observation in metal-based (specifically, those with AlOx tunnel junctions) single- electron tunneling (SET) devices is a time-dependent instability known as the long-term charge offset drift. This drift is not seen in Si-based devices. Our aim is

Correlation Between Microstructure, Electronic Properties and Ficker Noise in Organic Thin Film Transistors

March 31, 2008
Author(s)
Oana Jurchescu, Behrang H. Hamadani, Hao Xiong, Sungkyu Park, Sankar Subramanian, Neil M. Zimmerman, John E. Anthony, Thomas Jackson, David J. Gundlach
We report on observations of a direct correlation between the microstructure of the organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in solution

Lack of charge offset drift is a robust property of Si single electron transistors

February 12, 2008
Author(s)
Emmanouel S. Hourdakis, J A. Wahl, Neil M. Zimmerman
Single electron transistors (SETs) face several challenges before they can be considered technologically useful devices. One of them is the random, low frequency, charge offset drift that inhibits their use in parallel. Recently, tunable barrier Si SETs

Uncertainty budget for the NIST Electron Counting Capacitance Standard, ECCS- 1

November 21, 2007
Author(s)
Mark W. Keller, Neil M. Zimmerman, Ali L. Eichenberger
We measure a cryogenic, vacuum-gap capacitor by two methods: 1) charging it with a known number of electrons and measuring the resulting voltage, and 2) using a capacitance bridge traceable to the SI farad. We report a detailed uncertainty budget for the

Charge Offset Stability in Tunable-Barrier Si SET Devices

January 17, 2007
Author(s)
Neil M. Zimmerman, Brian Simonds, Mikio Fujiwara, Yukinori Ono, Yasuo Takahashi, Hiroshi Inokawa
The problem of charge offset drift in single-electron tunneling devices, based on the Coulomb blockade, can preclude their useful application in metrology and integrated devices. We demonstrate that in tunable-barrier Si-based SET transistors there is

Electrical breakdown in the microscale: testing the standard theory

December 29, 2006
Author(s)
Emmanouel S. Hourdakis, Garnett W. Bryant, Neil M. Zimmerman
We present breakdown voltage measurement data in air taken with a technique we recently developed. The data suggests that below 10 ?m of electrode separation the dominant effect is field emission of electrons from the electrodes. Analyzing the data in that