Publications

Displaying 151 - 175 of 296

Theory of Bright-Field Scanning Transmission Electron Microscopy for Tomography

January 1, 2005

Author(s)

Zachary H. Levine

Imaging Material Components of an Integrated Circuit Interconnect

January 1, 2004

Author(s)

Zachary H. Levine, Steven E. Grantham, D J. Paterson, I McNulty, I C. Noyan, T M. Levin

Two regions of interest on a copper/tungsten integrated circuit interconnect were imaged using two techniques: (a) the absorption spectrum was measured at 15 x-ray energies between 1687 eV and 1897 eV; and (b) the x-ray fluorescence spectrum was recorded

Imaging material components of an integrated circuit interconnect

January 1, 2004

Author(s)

Zachary H. Levine, Steven E. Grantham, D Paterson, I McNulty, I C. Noyan, T M. Levin

Photoelastic and Elastic Properties of the Fluorite Structure Materials, LiF, and Si

October 1, 2003

Author(s)

Zachary H. Levine, John H. Burnett, Eric L. Shirley

We present computational results of the photoelastic and elastic properties of calcium fluoride, strontium fluoride, barium fluoride, lithium fluoride, and silicon. We also present measurements of the photoelastic properties in the visble through the

Tomography in the Multiple Scattering Regime of the Scanning Transmission Electron Microscope

June 1, 2003

Author(s)

Zachary H. Levine

To date, nearly all tomography based on electron microscopy has been performed on samples 1 m or less thick. It has also relied on Beer s Law. In this work, tomographic reconstructions of a simulated scans of a photonic band-gap crystal based on bright

Parallax Measurements of Integrated Circuit Interconnects Using a Scanning Transmission Electron Microscope

February 1, 2003

Author(s)

Zachary H. Levine, J J. Gao, S Neogi, T M. Levin, J H. Scott, Steven E. Grantham

At 300 ke V scanning transmission electron microscope was used to obtain tilt-series images of two two-level copper integrated circuit samples. The center-to-center layer spacing obtained from the tilt series showed internal consistency at the level of 15%

Mass Absorption Coefficient of Tungsten and Tantalum, 1450 eV to 2350 eV: Experiment, Theory, and Application

January 1, 2003

Author(s)

Zachary H. Levine, S Grantham, Charles S. Tarrio, D Paterson, I McNulty, T M. Levin, A L. Ankudinov, J J. Rehr

The mass absorption coefficient of tungsten and tantalum was measured with soft x-ray photons from 1450 eV to 2350 eV using an undulator source. This includes the M 3, M 4, and M 5 absorption edges. X-ray absorption fine structure was calculated within a

Mass absorption coefficient of tungsten and tantalum, 1450 eV to 2350 eV: experiment, theory, and application,

January 1, 2003

Author(s)

Zachary H. Levine, Steven E. Grantham, Charles S. Tarrio, D J. Paterson, I McNulty, T M. Levin, A L. Ankudinov, J J. Rehr

Mass Absorption Coefficient of Tungsten and Tantalum,1450 eV to 2350 eV: Experiment, Theory, and Application

January 1, 2003

Author(s)

Zachary H. Levine, S Grantham, Charles S. Tarrio, D Patterson, I McNulty, T M. Levin, A L. Ankudinov, J J. Rehr

Summary of the WERB approved article Mass Absorption Coefficient of Tungsten and Tantalum, 1450 to 2350 eV: Experiment, Theory, and Application by myself and 7 other authors in J. Res. NIST 108 1-10 (2003)