U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by:

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 26 - 50 of 101

Phase mask-based multimodal superresolution microscopy

July 6, 2017
Author(s)
Ryan Beams, Jeremiah W. Woodcock, Jeffrey W. Gilman, Stephan J. Stranick
We demonstrate a multimodal superresolution microscopy technique based on a phase masked excitation beam in combination with spatially filtered detection. The theoretical foundation for calculating the focus from a non-paraxial beam with an arbitrary

Identification of the Crystal Symmetry in 1T' MoTe2 with Polarization-Resolved Second Harmonic Generation and Raman Scattering

October 13, 2016
Author(s)
Ryan Beams, Luiz Gustavo Cancado, Sergiy Krylyuk, Irina Kalish, Berc Kalanyan, Arunima Singh, Kamal Choudhary, Patrick Vora, Francesca M. Tavazza, Albert Davydov, Stephan J. Stranick
We study the crystal symmetry properties of few-layer 1T' MoTe2 using the polarization dependence of the second harmonic generation (SHG) and Raman scattering. Bulk 1T' MoTe2 is know to be inversion symmetric, however, we nd that the inversion symmetry is

Assessing Electron Backscattered Diffraction and Confocal Raman Microscopy Strain Mapping Using Wedge-indented Si

February 17, 2016
Author(s)
Lawrence Henry Friedman, Mark D. Vaudin, Stephan J. Stranick, Gheorghe Stan, Yvonne B. Gerbig, William Alexander Osborn, Robert F. Cook
The accuracy of electron backscattered diffraction (EBSD) and confocal Raman microscopy (CRM) for small-scale strain mapping are assessed using the multi-axial strain field surrounding a wedge indentation in Si as a test vehicle. The strain field is

Noncontact conductivity and dielectric measurement for high throughput roll-to-roll nanomanufacturing

November 23, 2015
Author(s)
Nathan D. Orloff, Christian J. Long, Jan Obrzut, Laurent Millaud, Francesca Mirri, Thomas R. Kole, Robert D. McMichael, Mattei Pasquali, Stephan J. Stranick, James A. Liddle
Advances in roll-to-roll processing of graphene [1] and carbon nanotube [2] have at last led to the continuous production of high-quality coatings and filaments, ushering in a wave of applications for flexible [3], [4] and wearable [5] electronics, woven

Stress mapping of micromachined polycrystalline silicon devices via confocal Raman microscopy

June 15, 2014
Author(s)
Grant A. Myers, Siddharth Hazra, Maarten de Boer, Chris A. Michaels, Stephan J. Stranick, Ryan P. Koseski, Robert F. Cook, Frank W. DelRio
Stress mapping of micromachined polycrystalline silicon devices with components in various levels of uniaxial tension was performed. Confocal Raman microscopy was used to form two-dimensional maps of Raman spectral shifts, which exhibited variations on the

Comparison of the Properties of Cellulose Nanocrystals and Cellulose Nanofibrils Isolated From Bacteria, Tunicate, and Wood Processed Using Acid, Enzymatic, Mechanical, and Oxidative Methods

April 18, 2014
Author(s)
Iulia A. Sacui, Jeffrey W. Gilman, Ryan C. Nieuwendaal, Stephan J. Stranick, Henryk Szmacinski, Mehdi Jorfi, Christopher Weder, Johan Foster, Richard Olsson, Daniel Burnett
This work describes the study and characterization of native cellulose nanocrystals and nanofibrils (CNCs, CNFs), whose crystallinity, morphology, aspect ratio, and surface chemistry depend on the raw material source and hydrolysis conditions. Measurement

Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via

October 11, 2011
Author(s)
Ryan P. Koseski, William Alexander Osborn, Stephan J. Stranick, Frank W. DelRio, Mark D. Vaudin, Thuy Dao, Vance H. Adams, Robert F. Cook
The stress in silicon surrounding a tungsten-filled through-silicon via (TSV) is measured using confocal Raman microscopy line scans across the TSV both before and after etch removal of an oxide stack used as a mask to define the TSV during fabrication

Comparison of the Sensitivity and Image Contrast in Spontaneous Raman and Coherent Stokes Raman Scattering Microscopy of Geometry Controlled Samples

February 9, 2011
Author(s)
Hyun M. Kim, Chris A. Michaels, Garnett W. Bryant, Stephan J. Stranick
We experimentally compare the performance and contrast differences between spontaneous and coherent Stokes Raman scattering microscopy. We demonstrate the differences on a series of geometry controlled samples that range in complexity from a point (array

Measurement of residual stress field anisotropy at indentations in silicon

June 23, 2010
Author(s)
Yvonne B. Gerbig, Stephan J. Stranick, Robert F. Cook
The residual stress field around spherical indentations on single crystal silicon (Si) of different crystallographic orientation is mapped by confocal Raman microscopy. All orientations exhibit an anisotropic stress pattern with an orientation specific