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Search Publications by: Yicheng Wang (Fed)

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Displaying 26 - 50 of 92

A digitally programmable capacitance standard

April 1, 2004
Author(s)
Yicheng Wang, Lai H. Lee
We constructed a digitally programmable capacitance standard by modifying a commercial temperature-stabilized 100 pF capacitance standard which consists of 23 binary-weighted capacitor elements on a single fused-silica disk. The variable capacitor can be

Frequency dependence of capacitance standards

September 1, 2003
Author(s)
Yicheng Wang
We measured the frequency dependence of a 10 pF transportable fused-silica capacitor from 50 Hz to 20 kHz. The results have a relative standard uncertainty of 0.32x10^(-6), 0.15x10^(-6), and 0.37x10(-6) at 100 Hz, 400 Hz, and 20 kHz, respectively. This

Measurements of frequency dependence of fused-silica capacitors

August 1, 2003
Author(s)
Yicheng Wang
In order to improve the capacitance calibration services at the National Institute of Standards and Technology, we need to determine the frequency dependence of all the reference capacitance standards over the audio frequency range. The value of a standard

C 4 F 6 1,3 Hexafluorobutadiene - A New Etching Gas: Studies on Material Compatibility, Behavior in Inductively Coupled Plasma and Etch Processes Performance

June 1, 2003
Author(s)
A Nicoletti, P Srinivasan, M Riva, Eric C. Benck, A N. Goyette, Yicheng Wang, J M. Kim, P Hsieh, A Athayde, Abhay Joshi
Hexafluoro-1,3-butadiene (C 4F 6) is a relatively new etch gas for the manufacturing of semiconductor devices, especially in critical etch processes that need high aspect ratios and selectivity. It is able to combine very high performance with a benign

Surface finish effects on partial discharge with embedded electrodes

January 1, 2003
Author(s)
Aleta T. Wilder, Robert E. Hebner, Yicheng Wang
Partial discharge measurements have been used to characterize the response of dielectric insulation materials exposed to ac voltages. Electrode surface finish can affect such partial discharge characteristics. This paper provides comparisons to the effect

Electron Drift in C4F6 and C4F6/Ar Mixtures

September 1, 2002
Author(s)
Amanda N. Goyettes, Yicheng Wang, Gerald FitzPatrick
We report measurements of electron drift velocities as a function of density-reduced electric field, w(E/N), for hexafluorobutadiene (C4F6) and mixtures of C4F6 with Ar. The w(E/N) for the mixtures of C4F6 with Ar can aid Boltzmann transport equation

Rate Constants for Unimolecular Decomposition of SF 6 -

November 21, 2001
Author(s)
Yicheng Wang, R. Champion, I. V. Dyakov, B. Peko
Insulating gas mixtures containing SF 6 have been promoted to serve as replacements for pure SF 6 in order to reduce SF 6 atmospheric emission. It has been argued that some synergism may be achieved by choosing proper buffer gases in mixtures with SF 6