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Search Publications by: Ndubuisi George Orji (Fed)

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Displaying 1 - 25 of 155

Strategic Opportunities for U.S. Semiconductor Manufacturing

August 1, 2022
Author(s)
Anita Balachandra, David Gundlach, Paul D. Hale, Kevin K. Jurrens, R Joseph Kline, Tim McBride, Ndubuisi George Orji, Sanjay (Jay) Rekhi, Sivaraj Shyam-Sunder, David G. Seiler
Semiconductors are critical to our Nation's economic growth, national security, and public health and safety. Revolutionary advances in microelectronics continue to drive innovations in communications, information technology, health care, military systems

Spectral Analysis of Line Edge and Line Width Roughness using Wavelets

April 1, 2021
Author(s)
Ndubuisi George Orji
Although line edge and line width roughness (LER/LWR) have been key metrology challenges over the last 15 years, the advent of extreme-ultraviolet lithography (EUV) has increased the importance of its measurement and control. Lithographically printed

Wear comparison of critical dimension-atomic force microscopy tips

March 28, 2020
Author(s)
Ndubuisi G. Orji, Ronald G. Dixson, Ernesto Lopez, Bernd Imer
Nanoscale wear affects the performance of atomic force microscopy (AFM)-based measurements for all applications including process control, nanoelectronics characterization and topography measurements. As such, methods to prevent or reduce AFM tip wear is

Metrology requirements for next generation of semiconductor devices

April 4, 2019
Author(s)
Ndubuisi G. Orji
Although devices based on traditional CMOS architectures are expected to reach their physical limits in the next few years, the devices and materials involved are more complex and difficult to measure than ever before. The nanoscale sizes mean that the

Metrology for the next generation of semiconductor devices

October 12, 2018
Author(s)
Ndubuisi G. Orji, Mustafa Badaroglu, Bryan M. Barnes, Carlos Beitia, Benjamin D. Bunday, Umberto Celano, Regis J. Kline, Mark Neisser, Yaw S. Obeng, Andras Vladar
The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering

Spatial Dimensions in Atomic Force Microscopy: Instruments, Effects, and Measurements

August 15, 2018
Author(s)
Ronald G. Dixson, Ndubuisi G. Orji, Ichiko Misumi, Gaoliang Dai
Atomic force microscopes (AFMs) are commonly and broadly regarded as being capable of three dimensional imaging. However, conventional AFMs suffer from both significant functional constraints and imaging artifacts that render them less than fully three

Virtual Metrology White Paper - INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMS(IRDS)

April 9, 2018
Author(s)
Ndubuisi G. Orji, Yaw S. Obeng, Carlos Beitia, Supika Mashiro, James Moyne
This white paper provides an overview of virtual metrology (VM) and the benefits it can provide, with cost reduction (both capital expenditure and cycle time) being the primary benefit. The white paper also examines some of the issues preventing wider

Contour Metrology using Critical Dimension Atomic Force Microscopy

December 15, 2016
Author(s)
Ndubuisi G. Orji, Ronald G. Dixson, Boon Ping Ng, Andras Vladar, Michael T. Postek
The critical dimension atomic force microscope (CD-AFM) has been proposed as an instrument for contour measurement and verification – since its capabilities are complementary to the widely used scanning electron microscope (SEM). Although data from CD-AFM