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Search Publications by: Vivek M. Prabhu (Fed)

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Displaying 76 - 100 of 113

The Effect of Deprotection Extent on Swelling and Dissolution Regimes of Thin Polymer Films

October 28, 2006
Author(s)
Ashwin Rao, Shuhui Kang, B D. Vogt, Vivek M. Prabhu, Eric K. Lin, Wen-Li Wu, M Muthukumar
The response of unentangled polymer thin films to aqueous hydroxide solutions is measured as a function of increasing weakly-acidic methacrylic acid comonomer content produced by an in-situ reaction-diffusion process. Quartz crystal microbalance with

Deprotection Kinetics in 193 nm Photoresist Thin Films: Influence of Copolymer Content

July 25, 2006
Author(s)
Shuhui Kang, Vivek M. Prabhu, B D. Vogt, Eric K. Lin, Wen-Li Wu, Karen Turnquest
The reaction-diffusion mechanism of photoacids is dependent upon many variables including the reaction rate, size of the acid counterion species and temperature. Recent experiments have demonstrated the acid diffusion can be controlled by a combination of

Fundamentals of the Reaction-Diffusion Process in Model EUV Photoresists

March 1, 2006
Author(s)
Kristopher Lavery, George Thompson, Hai Deng, D S. Fryer, Kwang-Woo Choi, B D. Vogt, Vivek Prabhu, Eric K. Lin, Wen-Li Wu, Sushil K. Satija, Michael Leeson, Heidi B. Cao
More demanding requirements are being made of photoresist materials for fabrication of nanostructures as the feature critical dimensions (CD) decrease. For EUV resists, control of line width roughness (LWR) and high resist sensitivity are key requirements

Dissolution Fundamentals of 193-nm Methacrylate Based Photoresists

February 19, 2006
Author(s)
Ashwin Rao, Shuhui Kang, B D. Vogt, Vivek Prabhu, Eric K. Lin, Wen-Li Wu, Karen Turnquest, W D. Hinsberg
The dissolution of partially deprotected chemically amplified photoresists is the final step in printing lithographic features. Since this process step can be tuned independently from the design of the photoresist chemistry, fundamental measurements of the

Direct Measurement of the Counterion Distribution Within Swollen Polyelectrolyte Films

July 19, 2005
Author(s)
Vivek M. Prabhu, B D. Vogt, Wen-Li Wu, Eric K. Lin, Jack F. Douglas, Sushil K. Satija, D L. Goldfarb, H Ito
The depth profile of the counterion concentration within thin polyelectrolyte films was measured in situ using contrast variant specular neutron reflectivity to characterize the initial swelling stage of the film dissolution.Wefind substantial counterion

Direct Measurement of the Counterion Distribution Within Swollen Polyelectrolyte Films

May 20, 2005
Author(s)
Vivek M. Prabhu, B D. Vogt, Wen-Li Wu, Jack F. Douglas, Eric K. Lin, Sushil K. Satija, D M. Goldfarb, H Ito
A depth profile of the counterion concentration within thin polyelectrolyte films was measured in-situ using contrast variant specular neutron reflectivity to characterize the initial swelling stage of the film dissolution. We find a substantial counterion

Interfacial Structure of Photoresist Thin Films in Developer Solutions

March 1, 2005
Author(s)
Vivek M. Prabhu, B D. Vogt, Wen-Li Wu, Jack F. Douglas, Sushil K. Satija, D M. Goldfarb, H Ito
The development step is critical to the fabrication of nanostructures in chemically amplified photoresist technology. With critical dimensions (CD) shrinking to sub-100 nm and the concurrent reduction in exposure radiation wavelength, line-edge roughness

Water Distribution Within Immersed Polymer Films

February 1, 2005
Author(s)
B D. Vogt, Christopher Soles, Vivek Prabhu, Sushil K. Satija, Eric K. Lin, Wen-Li Wu
The emergence of immersion lithography as a potential alternative for the extension of current lithography tools will require a fundamental understanding of the interactions between the photoresist and the immersion liquid such as water. The water

Water Immersion of Model Photoresists: Interfacial Influences on Water Concentration and Surface Morphology

February 1, 2005
Author(s)
B D. Vogt, D L. Goldfarb, M Angelopoulos, Christopher Soles, C M. Wang, Vivek Prabhu, P M. McGuiggan, Jack F. Douglas, Eric K. Lin, Wen-Li Wu, Sushil K. Satija
Immersion lithography has emerged as an alternative to the 157 nm node and as such understanding of the interactions between the photoresist and immersion fluid (water) has become a pressing issue. The water concentration within the model photoresist films

Counterion associative behavior with flexible polyelectrolytes

September 1, 2004
Author(s)
Vivek M. Prabhu, Eric J. Amis, N S. Rosov
At low ionic strength, organic counterions dress a flexible charged polymer as measured directly by small-angle neutron scattering (SANS) and neutron spin-echo (NSE) spectroscopy. This dressed state, quantified by the concentration dependence of the static

Proton NMR Determination of Miscibility in a Bulk Model Photoresist System Poly (4-Hydroxystyene) and the Photoacid Generator, Di(t-butylphenyl) Iodonium Perfluorooctane Sulfonate

July 13, 2004
Author(s)
David L. VanderHart, Vivek M. Prabhu, Eric K. Lin
The intimacy of component mixing in 2 blends of poly(4-hydroxystyrene) (PHS) and a photoacid generator (PAG), di(t-butylphenyl) iodonium perfluorooctane sulfonate (PFOS) were studied by solid state proton NMR. Mass ratios were 91/9 and 85/15 PHS/PFOS

Correlation of the Reaction Front With Roughness in Chemically Amplified Photoresists

July 1, 2004
Author(s)
Ronald L. Jones, Vivek M. Prabhu, D M. Goldfarb, Eric K. Lin, Christopher L. Soles, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Wen-Li Wu, M Angelopoulos
A model bilayer geometry is used to examine fundamental contributions of in-situ reaction front profile width on resulting line edge roughness after development in standard 0.26 N tetramethyl ammonium hydroxide aqueous base developer. The bilayer geometry

Fundamentals of Developer-Resist Interactions for Line-Edge Roughness and Critical Dimension Control in Model 248 nm and 157 nm Photoresists

May 1, 2004
Author(s)
Vivek M. Prabhu, M Wang, E Jablonski, B D. Vogt, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, M Angelopoulos, H Ito
Organic polar solvent (1-butanol) versus aqueous base (tetramethylammonium hydroxide, (TMAH)) development quality are distinguished by neutral versus charged polymer (polyelectrolyte) dissolution behavior of photoresist bilayers on silicon substrates

Surface Effects in Chemically Amplified Photoresists: Environmental Stability and Segregation

February 1, 2004
Author(s)
E Jablonski, Vivek M. Prabhu, S Sambasivan, Daniel A. Fischer, Eric K. Lin, D L. Goldfarb, M Angelopoulos, H Ito
It is well known that chemically amplified photoresists are sensitive to certain airborne molecular contaminants, notably amines, during post exposure delay, although the actual cause and specific failure mechanism are unknown. To assess the effect of low