March 21, 2011
Author(s)
Joseph L. Tedesco, Nadine Gergel-Hackett, Laurie Stephey, Andrew A. Herzing, Madelaine H. Hernandez, Christina A. Hacker, Jan Obrzut, Lee J. Richter, Curt A. Richter
In order to study the conduction and loss mechanisms behind their operation, flexible sol-gel based memristors were fabricated with differing oxide film thicknesses and device sizes. XPS, TEM, EELS, and VASE measurements indicated the oxide was amorphous