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Search Publications by: R Joseph Kline (Fed)

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Displaying 1 - 25 of 88

Advancing Measurement Science for Microelectronics: CHIPS R&D Metrology Program

February 13, 2024
Author(s)
Marla L. Dowell, Hannah Brown, Gretchen Greene, Paul D. Hale, Brian Hoskins, Sarah Hughes, Bob R. Keller, R Joseph Kline, June W. Lau, Jeff Shainline
The CHIPS and Science Act of 2022 called for NIST to "carry out a microelectronics research program to enable advances and breakthroughs....that will accelerate the underlying R&D for metrology of next-generation microelectronics and ensure the

INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMSTM 2023 EDITION METROLOGY

December 8, 2023
Author(s)
Elisabeth Mansfield, Bryan Barnes, R Joseph Kline, Andras E. Vladar, Yaw S. Obeng, Albert Davydov
The Metrology Chapter identifies emerging measurement challenges from devices, systems, and integration of new materials in the semiconductor industry and describes research and development pathways for meeting them. This includes but not limited to

Quantitative relationships between film morphology, charge carrier dynamics, and photovoltaic performance in bulk-heterojunction binary vs. ternary acceptor blends

February 7, 2023
Author(s)
Weigang Zhu, Guoping Li, Subhrangsu Mukherjee, Natalia Powers-Riggs, Leighton Jones, Eliot Gann, R Joseph Kline, Andrew Herzing, Jenna Logsdon, Lucas Flagg, Charlotte Stern, Ryan Young, Kevin Kohlstedt, George Schatz, Dean DeLongchamp, Michael Wasielewski, Ferdinand Melkonyan, Antonio Facchetti, Tobin Marks
Addressing pertinent and perplexing questions regarding why nonfullerene acceptors (NFAs) promote higher power conversion efficiencies (PCEs) than traditional fullerenes and how photoactive bulk heterojunction (BHJ) film morphology, charge photogeneration

Strategic Opportunities for U.S. Semiconductor Manufacturing

August 1, 2022
Author(s)
Anita Balachandra, David Gundlach, Paul D. Hale, Kevin K. Jurrens, R Joseph Kline, Tim McBride, Ndubuisi George Orji, Sanjay (Jay) Rekhi, Sivaraj Shyam-Sunder, David G. Seiler
Semiconductors are critical to our Nation's economic growth, national security, and public health and safety. Revolutionary advances in microelectronics continue to drive innovations in communications, information technology, health care, military systems

Acoustoelasticity, Theory and Experiment

October 12, 2021
Author(s)
L Jiang, Regis J. Kline, Y Yacobi, E Drescher-Krasicka
As a promising tool to characterize residual stress in engineering structural components, acoustoelasticity has been the subject of a great deal of research over the past forty years. Although considerable achievements have been derived, most approaches of

Buried Structure in Block Copolymer Films Revealed by Soft X-ray Reflectivity

May 20, 2021
Author(s)
Daniel Sunday, Jacob L. Thelen, R Joseph Kline, Chun Zhou, Jiaxing Ren, Paul Nealey
Interactions between polymers and surfaces can be used to influence properties including mechanical performance in nanocomposites, the glass transition temperature, and the orientation of thin film block copolymers (BCPs). In this work we investigate how

A NIST facility for Resonant Soft X-ray Scattering measuring nano-scale soft matter structure at NSLS-II

January 26, 2021
Author(s)
Eliot Gann, Glenn Holland, R Joseph Kline, Peter Beaucage, Dean DeLongchamp, Daniel A. Fischer, Brian Collins, Terry McAfee, Christopher McNeill, Thomas Crofts
We present the design and performance of a Resonant Soft X-ray Scattering (RSoXS) station designed for soft matter characterization built by the National institute of Standards and Technology (NIST) at the National Synchrotron Light Source-II (NSLS-II)

X-Ray Metrology of Nanowire/ Nanosheet FETs for Advanced Technology Nodes

March 30, 2020
Author(s)
Madhulika S. Korde, Regis J. Kline, Daniel Sunday, Nick Keller, Subhadeep Kal, Cheryl Alix, Aelen Mosden, Alain C. Diebold
The three-dimensional architectures for field effect transistors (FETs) with vertical stacking of Gate-all-Around Nanowires provide a pathway to increased device density and superior electrical performance. However, the transition from research into

Influence of Polymer Aggregation and Liquid Immiscibility on Morphology Tuning by Varying Composition in PffBT4T-2DT/Non-Fullerene Organic Solar Cells

January 29, 2020
Author(s)
Subhrangsu Mukherjee, Dean M. DeLongchamp, Regis J. Kline, Iain McCulloch, Zeinab Hamid, Andrew Wadsworth, Elham Rezasoltani, Sarah Holliday, Mohammed Azzouzi, Anne Guilbert, Yifan Dong, Marios Neophytou, Mark Little, Helen Bristow, Artem Bakulin, James Durrant, Jenny Nelson, Andrew A. Herzing
The temperature dependent aggregation behavior of PffBT4T polymers used in organic solar cells plays a critical role in the formation of a favorable morphology in fullerene-based devices. However, there has been little investigation into the impact of

X-ray Metrology for the Semiconductor Industry Tutorial

February 1, 2019
Author(s)
Daniel F. Sunday, Wen-Li Wu, Scott Barton, Regis J. Kline
The semiconductor industry is in need of new, in-line dimensional metrology methods with higher spatial resolution for characterizing their next generation nanodevices. The purpose of this short course is to train the semiconductor industry on the NIST

Metrology for the next generation of semiconductor devices

October 12, 2018
Author(s)
Ndubuisi G. Orji, Mustafa Badaroglu, Bryan M. Barnes, Carlos Beitia, Benjamin D. Bunday, Umberto Celano, Regis J. Kline, Mark Neisser, Yaw S. Obeng, Andras Vladar
The semiconductor industry continues to produce ever smaller devices that are ever more complex in shape and contain ever more types of materials. The ultimate sizes and functionality of these new devices will be affected by fundamental and engineering

Advancing the computational methodology of rigid rod and semiflexible polymer systems: A new solution to the wormlike chain model with rod-coil copolymer calculations

October 3, 2018
Author(s)
Adam F. Hannon, Regis J. Kline, Dean DeLongchamp
A wormlike chain model for rod type blocks in a rod‐coil diblock copolymer is implemented in the self‐consistent field theory (SCFT) formalism. A pseudo‐spectral method is used to solve for the single‐chain partition function of this copolymer system

Xi-cam: A versatile interface for data visualization and analysis

April 13, 2018
Author(s)
Ronald Pandolfi, Dinesh Kumar, Guillaume Freychet, Holden Parks, Singanallur venkatakrishnan, Austin Blair, shreya Sahoo, Stefano marchesini, Christopher D. Liman, Daniel Sunday, Lenson Pellouchoud, Christopher Tassone, dilworth parkinson, Sean Fackler, Zhang Jiang, Apurva Mehta, Masafumi Fukuto, Kevin G. Yager, Regis J. Kline, Joseph Strzalka, Thomas Caswell, daniel Allan, Stuart Campbell, James Sethian, Harinarayan Krishnan, Alexander Hexemer

Blade Coating Aligned, High-Performance, Semiconducting-Polymer Transistors

February 22, 2018
Author(s)
Lee J. Richter, Hyun W. Ro, Regis J. Kline, Daniel A. Fischer, Dean M. DeLongchamp, Lars Thomsen, Christopher McNeil, Dawei Wu, Maria Kaplan, Eliot H. Gann
Recent demonstration of mobilities in excess of 10 cm2V-1s-1 have energized research in solution deposition of polymers for thin film transistor applications. Due to the lamella motif of most soluble, semiconducting polymers, the local mobility is

Optimizing Self-Consistent Field Theory Block Copolymer Models with X-Ray Metrology

February 12, 2018
Author(s)
Adam F. Hannon, Daniel Sunday, Alec Bowen, Gurdaman Khaira, Jiaxing Ren, Paul Nealey, Juan de Pablo, Regis J. Kline
A block copolymer self-consistent field theory (SCFT) model is used for direct analysis of experimental X-ray scattering data obtained from thin films of polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA) made from directed self-assembly. In a departure

Modeling the polarized X-ray scattering from periodic nanostructures with molecular anisotropy

December 1, 2017
Author(s)
Christopher D. Liman, Thomas A. Germer, Daniel F. Sunday, Dean M. DeLongchamp, Regis J. Kline
We discuss a new technique to measure molecular orientation in nanostructures using resonant soft X-rays. This technique is based on a variable angle transmission measurement called critical dimension X-ray scattering that enables the characterization of