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Search Publications by: Kin (Charles) Cheung (Fed)

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Displaying 51 - 75 of 251

Analysis and Control of RRAM Overshoot Current

January 15, 2018
Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Jason P. Campbell, Jason T. Ryan, Dmitry Veksler, Helmut Baumgart, Kin P. Cheung
To combat the large variability problem in RRAM,current compliance elements are commonly used to limit the inrush current during the forming operation. Regardless of the compliance implementation (1R-1R or 1T-1R), some degree of current overshoot is

Ferroelectricity in Polar Polymer-based FETs: A Hysteresis Analysis

January 15, 2018
Author(s)
Vasileia Georgiou, Dmitry Veksler, Jason Campbell, Jason Ryan, Pragya Shrestha, D. E. Ioannou, Kin P. Cheung
There is an increasing number of reports on polar polymer-based Ferroelectric Field Effect Transistors (FeFETs), where the hysteresis of the drain current - gate voltage (Id-Vg) curve is investigated as the result of the ferroelectric polarization effect

Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub-Glass Transition Temperature

December 18, 2017
Author(s)
Vasileia Georgiou, Dmitry Veksler, Jason T. Ryan, Jason P. Campbell, Pragya R. Shrestha, D. E. Ioannou, Kin P. Cheung
An unexpected rapid anneal of electrically active defects in an ultra-thin (15.5 nm) polar polyimide film at and below glass transition temperature (Tg) is reported. The polar polymer is the gate dielectric of a thin-film-transistor (TFT). Gate leakage

Towards reliable RRAM performance: macro- and microscopic analysis of operation processes

November 9, 2017
Author(s)
Gennadi Bersuker, Dmitry Veksler, David M. Nminibapiel, Pragya Shrestha, Jason Campbell, Jason Ryan, Helmut Baumgart, Maribeth Mason, Kin P. Cheung
Resistive RAM technology promises superior performance and scalability while employing well- developed fabrication processes. Conductance is strongly affected by structural changes in oxide insulators that make cell switching properties extremely sensitive

Microwave Evaluation of Electromigration Susceptibility in Advanced Interconnects

November 1, 2017
Author(s)
Yaw S. Obeng, Kin P. Cheung, Dmitry Veksler, Christopher E. Sunday
Traditional metrology has been unable to adequately address the needs of emerging integrated circuits (ICs) at the nano scale; thus, new metrology and techniques are needed. For example, the reliability challenges in fabrication need to be well understood

Local field effect on charge-capture/emission dynamics

October 30, 2017
Author(s)
Kin P. Cheung, Dmitry Veksler, Jason P. Campbell
Charge-capture/emission is ubiquitous in solid state devices. Its dynamics often play critical roles in device operation and reliability. Treatment of this basic process is found in many text books and is considered well understood. As in many solid state

Impact of RRAM Read Fluctuations on the Program-Verify Approach

May 22, 2017
Author(s)
David M. Nminibapiel, Dmitry Veksler, Pragya Shrestha, Jason Campbell, Jason Ryan, Helmut Baumgart, Kin P. Cheung
The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that program-verify

Cryogenic pulsed I-V measurements on homo- and heterojunction III-V TFETs

April 1, 2017
Author(s)
Quentin Smets, Jihong Kim, Jason Campbell, David M. Nminibapiel, Dmitry Veksler, Pragya Shrestha, Rahul Pandey, Anne S. Verhulst, Eddy Simoens, David J. Gundlach, Curt A. Richter, Kin P. Cheung, Suman Suman, Anda Mocuta, Nadine Collaert, Aaron Thean, Marc Heyns
Most experimental reports of tunneling field-effect transistors show defect-related performance degradation. Charging of oxide traps causes Fermi level pinning, and Shockley-Read-Hall (SRH)/trap-assisted tunneling (TAT) generation cause unwanted leakage

Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling

January 23, 2017
Author(s)
David M. Nminibapiel, Dmitry Veksler, Pragya R. Shrestha, Jihong Kim, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Kin P. Cheung
We report on new fluctuation dynamics of the high resistance state of Hafnia-based RRAM devices after RESET. We observe that large amplitude fluctuations occur more frequently immediately after programming and their frequency of occurrence decays in the