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Search Publications by: Kin (Charles) Cheung (Fed)

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Displaying 76 - 100 of 251

Rapid and Accurate C-V Measurements

October 1, 2016
Author(s)
Jihong Kim, Pragya Shrestha, Jason Campbell, Jason Ryan, David M. Nminibapiel, Joseph Kopanski, Kin P. Cheung
We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100 MHz applied sine-wave, which swings from accumulation to strong inversion, is digitized directly using an

Compliance-Free Pulse Forming of Filamentary RRAM

September 30, 2016
Author(s)
Pragya Shrestha, David M. Nminibapiel, Jihong Kim, Helmut Baumgart, Kin (Charles) Cheung, Jason Campbell
Despite the overwhelming effort to improve the efficacy of resistive random access memory (RRAM), the underlying physics governing RRAM operation have proven elusive. A survey of the recent literature almost universally indicates that the remaining glaring

Modeling early breakdown failures of gate oxide in SiC power MOSFETs

July 14, 2016
Author(s)
Zakariae Chbili, Asahiko Matsuda, Jaafar Chbili, Jason T. Ryan, Jason P. Campbell, Mhamed Lahbabi, D. E. Ioannou, Kin P. Cheung
One of the most serious technology roadblocks for SiC DMOSFETs is the significant occurrence of early failures in time-dependent-dielectric-breakdown (TDDB) testing. Conventional screening methods have proved ineffective because the remaining population is

Observation of Strong Reflection of Electron Waves Exiting a Ballistic Channel at Low Energy

June 10, 2016
Author(s)
Jason Campbell, Jason Ryan, Kin P. Cheung, David J. Gundlach, Changze Liu, Canute I. Vaz, Richard G. Southwick III, Anthony S. Oates, Ru Huang
Wave scattering by a potential step is a nearly ubiquitous concept. Thus, it is surprising that theoretical treatments of ballistic transport in nanoscale devices, from quantum point contacts to ballistic transistors, assume no reflection even when the

Device-Level Jitter as a Probe of Ultrafast Traps in High-k MOSFETs

April 16, 2016
Author(s)
Dmitry Veksler, Jason Campbell, Kin (Charles) Cheung, J. Zhong, H. Zhu, C. Zhao
A methodology for evaluation of ultra-fast interfacial traps, using jitter measurements as a probe, is developed. This methodology is applied to study the effect of PBTI stress on density of ultra-fast electron traps (with 500ps to 5ns characteristic

Interface-State Capture Kinetics by Variable Duty Cycle Charge Pumping

April 27, 2015
Author(s)
Asahiko Matsuda, Jason T. Ryan, Jason P. Campbell, Kin P. Cheung
We demonstrated a new variant of the charge-pumping technique featuring varying duty cycle gate pulses to directly probe the interface-state carrier capture process in the time domain. This technique retains the exceptional sensitivity of charge pumping

Electron Spin Resonance Scanning Probe Spectroscopy for Ultra-Sensitive Biochemical Studies

April 22, 2015
Author(s)
Jason P. Campbell, Jason T. Ryan, Pragya R. Shrestha, Zhanglong Liu, Canute I. Vaz, Jihong Kim, Vasileia Georgiou, Kin P. Cheung
Electron spin resonance (ESR) spectroscopy’s affinity for detecting paramagnetic free radicals, or spins, has been increasingly employed to examine a large variety of biochemical interactions. Such paramagnetic species are broadly found in nature and can

Interface-State Capture Cross Section Why Does It Vary So Much?

April 20, 2015
Author(s)
Jason T. Ryan, Asahiko Matsuda, Jason P. Campbell, Kin P. Cheung
A capture cross section value is often assigned to Si-SiO2 interface defects. Using a kinetic variation of the charge pumping technique and transition state theory, we show that the value of capture cross section is extremely sensitive to the measurement