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Search Publications by: Jason Campbell (Fed)

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Displaying 101 - 116 of 116

NBTI: Why Won't This Thing Go Away?

October 19, 2009
Author(s)
Jason P. Campbell
The negative-bias temperature instability (NBTI) is a reliability problem that, in the last ten years, has risen from relative obscurity to become the most important reliability problem in advanced pMOSFET devices. Even though a significant effort has been

Wafer-level Hall Measurement on SiC MOSFET

October 16, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, John S. Suehle, Kuang Sheng
Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for understanding the mechanisms that lead to low mobility. The most widely used effective mobility measurements overestimate

Large Random Telegraph Noise in Sub-Threshold Operation of Nano-Scale nMOSFETs

May 18, 2009
Author(s)
Jason P. Campbell, Liangchun (. Yu, Kin P. Cheung, Jin Qin, John S. Suehle, A Oates, Kuang Sheng
We utilize low-frequency noise measurements to examine the sub-threshold voltage (sub-VTH) operation of highly scaled devices. We find that the sub-VTH low-frequency noise is dominated by random telegraph noise (RTN). The RTN is exacerbated both by channel

The Negative Bias Temperature Instability vs. High-Field Stress Paradigm

May 18, 2009
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
A new and more accurate fast-IDVG measurement methodology is utilized to examine the transient degradation and recovery associated with the negative-bias temperature instability (NBTI). The results reveal that the anomalously large initial degradations

Random Telegraph Noise in Highly Scaled nMOSFETs

April 26, 2009
Author(s)
Jason P. Campbell, Jin Qin, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, A Oates, Kuang Sheng
Recently 1/f and random telegraph noise (RTN) studies have been used to infer information about bulk dielectric defects' spatial and energetic distributions. These analyses rely on a noise framework which involves charge exchange between the inversion

Channel Hot-Carrier Effect of 4H-SiC MOSFET

March 2, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, John S. Suehle, Jason P. Campbell, Kuang Sheng, Aivars Lelis, Sei-Hyung Ryu
SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high

The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs

October 17, 2008
Author(s)
Jason P. Campbell, Jin Qin, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, A Oates, Kuang Sheng
Random telegraph noise (RTN) has recently become an important issue in advanced circuit performance. It has also recently been used as a tool for gate dielectric defect profiling. In this work, we show that the widely accepted model thought to govern RTN

The transient behavior of NBTI - A new prospective

October 17, 2008
Author(s)
Kin P. Cheung, Jason P. Campbell
The Negative-Bias-Temperature-Instability (NBTI) is currently one of the most serious reliability issues in advanced CMOS technology. Specifically, the fast recovery of NBTI degradation immediately after stress is removed has recently become a hot topic

Oxide Reliability of SiC MOS Devices

October 12, 2008
Author(s)
Liangchun (. Yu, Kin P. Cheung, Jason P. Campbell, John S. Suehle, Kuang Sheng
Silicon carbide possesses excellent material properties for high temperature, high frequency and high power applications. Among all the device structures, MOSFET has advantages such as low gate leakage current, easier device control etc., and therefore

New Insight into NBTI Transient Behavior Observed from Fast-GM Measurements

September 1, 2008
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle
Fast-IDVG measurements have become an increasingly important tool to examine MOSFET transient degradation. The threshold voltage (VTH) extracted from fast-IDVG measurements is often used to infer the transient behavior of trapped charged in the gate

Negative-Bias Temperature Instability Induced Electron Trapping

July 21, 2008
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
Despite four decades of research, the physics responsible for the negative bias temperature instability (NBTI) in p-channel metal-oxide-silicon field-effect-transistors is still unresolved. The current NBTI debate focuses on the dominance of either a hole

Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications

June 17, 2008
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and electron

THE FAST INITIAL THRESHOLD VOLTAGE SHIFT: NBTI OR HIGH-FIELD STRESS

April 27, 2008
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle
Recent 'NBTI' studies have come to involve very high electric fields, yet these same studies are used to criticize the lower field 'NBTI' models. This study examines both high- and low-field degradation phenomena by monitoring the initial threshold voltage