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Search Publications by: Bob R. Keller (Fed)

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Displaying 76 - 91 of 91

Strain-Induced Grain Growth during Rapid Thermal Cycling of Aluminum Interconnects

January 1, 2007
Author(s)
Robert Keller, Roy H. Geiss, Nicholas Barbosa, Andrew Slifka, David T. Read
We demonstrate by use of automated electron backscatter diffraction (EBSD) the rapid growth of grains in non-passivated, sputtered Al-1Si interconnects during 200 Hz thermal cycling induced by alternating electric current. Mean grain diameters were

COMPARISON OF TEXTURE IN COPPER AND ALUMINUM THIN FILMS AS DETERMINED BY XRD AND EBSD

October 2, 2006
Author(s)
Jens Mueller, Davor Balzar, Roy H. Geiss, David T. Read, Robert Keller
Texture in materials has a large influence on many properties of thin films; it is customarily determined by neutron or X-ray diffraction by measuring pole figures and evaluating orientation-distribution functions (ODF). X-ray diffraction (XRD) was the

Electrical Methods for Mechanical Characterization of Interconnect Thin Films

September 1, 2005
Author(s)
Robert Keller, Cynthia A. Volkert, Roy H. Geiss, Andrew Slifka, David T. Read, Nicholas Barbosa, Reiner Monig
We describe the use of electrical methods for evaluating mechanical reliability and properties of patterned copper and aluminum interconnects on silicon substrates. The approach makes use of controlled Joule heating, which causes thermal strains in the

Workshop on Reliability Issues in Nanomaterials

August 1, 2005
Author(s)
Robert Keller, David T. Read, Roop L. Mahajan
The Workshop on Reliability Issues in Nanomaterials was held at the Boulder Laboratories of the National Institute of Standards and Technology (NIST) on August 17-19, 2004. It was designed to promote a particular subset of NIST?s responsibilities under the

Electric Current Induced Thermomechanical Fatigue Testing of Interconnects

March 1, 2005
Author(s)
Robert Keller, Roy H. Geiss, Yi-Wen Cheng, David T. Read
We demonstrate the use of electrical methods for evaluating the thermomechanical fatigue properties of patterned aluminum and copper interconnects on silicon-based substrates. Through a careful selection of alternating current frequency and current density

Microstructure Evolution during Alternating-Current-lnduced Fatigue

November 1, 2004
Author(s)
Robert Keller, Roy H. Geiss, Yi-Wen Cheng, David T. Read
Subjecting electronic interconnect lines to high-density, low.frequency alternating current creates cyclic thermomechanical stresses that eventually cause electrical failure. A detailed understanding of the failure process could contribute to both