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Search Publications by: Dustin Hite (Fed)

Displaying 26 - 34 of 34

Decoherence in Josephson Qubits from Junction Resonances

August 13, 2004

Author(s)

Raymond Simmonds, Kristine Lang, Dustin Hite, David P. Pappas, John M. Martinis

We present experimental data that demonstrates a large reduction in the coherence of a Josephson phase qubit from spurious microwave resonances. These resonances are believed to arise from resonant fluctuators in the tunnel junction that couple to the

Surface reconstruction of FeAl(110) studied by scanning tunnelling microscopy and angle-resolved photoemission spectroscopy

July 16, 2004

Author(s)

Orhan Kizilkaya, Dustin Hite, David M. Zehner, Phillip T. Sprunger

The surface geometric and electronic structure of the FeAl(110) intermetallic alloy has been investigated by scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES). Preferential sputtering results in a depletion of Al in

In-situ conductance characterization of Fe/Ag multilayer contacts on GaAs

July 1, 2003

Author(s)

Dustin Hite, Stephen E. Russek, David P. Pappas

Electrical transport characteristics for epitaxially grown Ag/Fe/Ag multilayers on GaAs(100) and GaAs(110) have been studied under various growth conditions. The surfaces and structure of the multilayer were characterized by low energy electron diffraction

Formation of aluminum oxide thin films on FeAl(110) studied by STM

February 6, 2003

Author(s)

Orhan Kizilkaya, Dustin Hite, David M. Zehner, Phillip T. Sprunger

The surface morphology and atomic structure of clean and oxidized FeAl(l 10) surfaces have been investigated with scanning tunneling microscopy (STM). An incommensurate reconstructed structure, having FeAl2 stoichiometry confined to the outmost layer, is

Reactive epitaxy of beryllium on Si(1 1 1)-(7 x 7)

January 1, 2003

Author(s)

Dustin Hite, Shu-Jung Tang, Phillip T. Sprunger

Scanning tunneling microscopy (STM) and photoelectron spectroscopy (PES) have been used to investigate the nucleation, growth, and structure of beryllium on Si(1 1 1)-(7 x 7). STM indicates that a chemical reaction occurs at temperatures as low as 120 K