November 1, 2008
Author(s)
Paul T. Blanchard, Kristine A. Bertness, Todd E. Harvey, Lorelle Mansfield, Aric W. Sanders, Norman A. Sanford
In this paper, we demonstrate novelMESFETs based on individual GaN nanowires. The Pt/Au Schottky gates exhibited excellent two-terminal Schottky diode rectification behavior. The average effective Schottky barrier height was 0.87 eV, with an average