February 5, 2018
Author(s)
Gerard E. Henein, Juraj Topolancik, Kerry NMN Siebein
SiO2, Al2O3 and ITO have been deposited via ion beam sputtering at room temperature. The SiO2 films, 100 nm thick, were highly insulating with a resistivity of 10 16 Ω·m and breakdown field in excess of 7x108 V/m. The Al2O3 films, 3 to 4 nm in thickness