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Search Publications by: Nicholas Jungwirth (Fed)

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Displaying 1 - 14 of 14

Characterizing interconnects to 325 GHz

November 20, 2024
Author(s)
Nicholas Jungwirth, Bryan Bosworth, Meagan Papac, Aaron Hagerstrom, Eric Marksz, Jerome Cheron, Angela Stelson, Florian Bergmann, Ari Feldman, Dylan Williams, Christian Long, Nathan Orloff
We developed an interconnect characterization procedure that first embeds the interconnect into the error boxes of a multiline thru-reflect-line calibration and subsequently de-embeds the interconnect with a multi-tiered calibration. We experimentally

Broadband Characterization of Flexible Conductor-Dielectric Composites

November 4, 2024
Author(s)
Luckshitha Suriyasena Liyanage, Nathan Orloff, Nicholas Jungwirth, Sarah Evans, Christian Long, Angela Stelson, Jacob Pawlik, James Booth
Broadband measurements are important for characterizing a wide range of materials for communications applications at microwave and mm-wave frequencies. Here we report on broadband measurements of the effective permittivity of conductor-dielectric flexible

Demonstrating Broadside-Coupled Coplanar Waveguide Interconnects to 325 GHz

August 15, 2024
Author(s)
Nicholas Jungwirth, Bryan Bosworth, Aaron Hagerstrom, Meagan Papac, Eric Marksz, JEROME CHERON, Kassiopeia Smith, Angela Stelson, Ari Feldman, Dylan Williams, Nathan Orloff, Christian Long
State-of-the-art integrated circuits leverage dissimilar materials to optimize system performance. Such heterogeneous integration often involves multiple chips electrically coupled to one another via bump bonds or wire-bond interconnects. While these

A Distributed Theory for Contactless Interconnects at Terahertz Frequencies

June 25, 2024
Author(s)
Nicholas Jungwirth, Bryan Bosworth, Aaron Hagerstrom, Meagan Papac, Eric Marksz, JEROME CHERON, Kassiopeia Smith, Angela Stelson, Ari Feldman, Dylan Williams, Nathan Orloff, Christian Long
Here we test a multimodal model for distributed contactless interconnects by comparing it to 3D full-wave simulations. In comparison to 3D simulations, the model offers insight into how the interconnect works and reduces the computational cost of

A 0.1 GHz to 1.1 THz Inverted Grounded-CPW mTRL Calibration Kit Characterization in an InP HBT Process

May 13, 2024
Author(s)
Jerome Cheron, Rob Jones, Dylan Williams, Miguel Urteaga, Bryan Bosworth, Nick Jungwirth, Jeffrey Jargon, Ben Jamroz, Chris Long, Nate Orloff, Ari Feldman, Peter Aaen
We report a novel design approach of on-wafer multiline thru-reflect-line (mTRL) calibration kit fabricated on a commercial semiconductor-based transistor process that we validate from 0.1 GHz to 1.1 THz. The on-wafer calibration standards are designed

Measuring the permittivity of fused silica with planar on-wafer structures up to 325 GHz

February 12, 2024
Author(s)
Nicholas Jungwirth, Florian Bergmann, Bryan Bosworth, Jerome Cheron, Christian Long, Nathan Orloff
Fused silica has become an interesting alternative to silicon for millimeter-wave (mmWave) applications. Unfortunately, there are few reports on the measurement of fused silica's permittivity above 110 GHz using electrical rather than optical methods

Electro-Optic Imaging Millimeter-Wave Propagation On-Wafer

September 27, 2023
Author(s)
Bryan Bosworth, Nick Jungwirth, Jerome Cheron, Franklyn Quinlan, Nate Orloff, Chris Long, Ari Feldman
We demonstrate an electro-optic imaging system for mmWaves propagating along a coplanar waveguide. Using dual optical frequency combs and a polarization resolved microscope, we image signals with bandwidth >100 GHz and >48 dB dynamic range.

Measuring the permittivity tensor of anisotropic DyScO3 to 110 GHz

August 14, 2023
Author(s)
Florian Bergmann, Meagan Papac, Nick Jungwirth, Bryan Bosworth, Tomasz Karpisz, Anna Osella, Lucas Enright, Eric Marksz, Angela Stelson, Chris Long, Nate Orloff
DyScO3 (DSO) is an attractive substrate on which to grow epitaxial thin films with extraordinary materials physics. However, its highly anisotropic permittivity makes some measurements exceedingly difficult: For instance, its permittivity tensor has not

Testing dielectric slab mode excitation, non-rectangular conductor profiles and edge roughness as sources of additional loss in mmWave transmission lines

July 28, 2023
Author(s)
Florian Bergmann, Nicholas Jungwirth, Bryan Bosworth, Jason Killgore, Eric Marksz, Tomasz Karpisz, Meagan Papac, Anna Osella, Lucas Enright, Christian Long, Nathan Orloff
Losses in mmWave transmission lines often exceed first-principles predictions based on measurements of dc resistivity and the nominal conductor geometry. In our case, we observed an additional distributed resistance of coplanar waveguides on DyScO3

Electro-Optically Derived Arbitrary Millimeter-Wave Sources with 100 GHz of Bandwidth

May 20, 2022
Author(s)
Bryan Bosworth, Nick Jungwirth, Kassiopeia Smith, Jerome Cheron, Franklyn Quinlan, Madison Woodson, Jesse Morgan, Andreas Beling, Ari Feldman, Dylan Williams, Nate Orloff, Chris Long
We demonstrate fine phase and amplitude control of millimeter waves, measured on-wafer using an electro-optic frequency comb, programmable spectral filter, and a uni-traveling carrier photodiode. We then synthesize arbitrary waveforms with 100 GHz of

High-Gain 500-GHz InP HBT Power Amplifiers

January 31, 2022
Author(s)
Jerome Cheron, Rob Jones, Richard Chamberlin, Dylan Williams, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Peter Aaen, Ari Feldman
We report two terahertz monolithic integrated circuit (TMIC) amplifiers operating at 500 GHz. The 6-stage single-ended power amplifiers use Teledyne's 130 nm indium-phosphide double heterojunction bipolar transistors in a common-base configuration. The

Collector Series-Resistor to Stabilize a Broadband 400 GHz Common-Base Amplifier

October 14, 2021
Author(s)
Jerome Cheron, Dylan Williams, Richard Chamberlin, Miguel Urteaga, Kassi Smith, Nick Jungwirth, Bryan Bosworth, Chris Long, Nate Orloff, Ari Feldman
The indium phosphide (InP) 130 nm double-heterojunction bipolar transistor (DHBT) offers milliwatts of output power and high signal amplification in the lower end of the terahertz frequency band when the transistor is used in a common-base configuration

Electro-optically derived millimeter-wave sources with phase and amplitude control

October 12, 2021
Author(s)
Bryan Bosworth, Nick Jungwirth, Kassi Smith, Jerome Cheron, Franklyn Quinlan, Ari Feldman, Dylan Williams, Nate Orloff, Chris Long
Integrated circuits are building blocks in millimeter-wave handsets and base stations, requiring nonlinear characterization to optimize performance and energy efficiency. Today's sources use digital-to-analog converters to synthesize arbitrary electrical

On-Wafer Metrology of a Transmission Line Integrated Terahertz Source

May 10, 2020
Author(s)
Kassiopeia A. Smith, Bryan T. Bosworth, Nicholas R. Jungwirth, Jerome G. Cheron, Nathan D. Orloff, Christian J. Long, Dylan F. Williams, Richard A. Chamberlin, Franklyn J. Quinlan, Tara M. Fortier, Ari D. Feldman
A combination of on-wafer metrology and high-frequency network analysis was implemented to measure the response of transmission-line integrated Er-GaAs and InGaAs photomixers up to 1 THz to support the telecommunication and electronics industry.