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PUBLICATIONS

Semiconductor Device Temperature Measurements Using Electrical Parameters

Published

Author(s)

David L. Blackburn

Abstract

The purpose of this paper is to describe the use of semiconductor device electrical parameters for measuring the temperature of a device. Included are discussions of the material and device parameters used as thermometers and an examination of the accuracy and interpretation of the temperature that is measured.
Citation
Future Circuits International (Technology Publishing Limited, London)
Pub Type
Journals

Keywords

device parameters, electrical parameters, MOSFET, thermometer, TSP

Citation

Blackburn, D. (1999), Semiconductor Device Temperature Measurements Using Electrical Parameters, Future Circuits International (Technology Publishing Limited, London) (Accessed January 14, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created May 1, 1999, Updated February 17, 2017