Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Some Physics and Chemistry of Hot-Wire Deposition

Published

Author(s)

Alan Gallagher

Abstract

Although hot-wire chemical vapor deposition (HWCVD) involves far fewer species than plasma enhanced CVD, I have used some physics and chemistry in the title because less is known than unknown regarding the hot-wire deposition processes, in even pure silane. I will concentrate on intrinsic a-Si:H deposition from SiH4/H2 vapors, since this is the simplest and most studied system, and it has considerable practical importance. I will start with the reactions on the hot wire, a metal filament, then discuss the radical-vapor reactions and finally the surface reactions that produce the film and its properties. This no a review, and I will not attempt to cover all work that has been done to elucidate these processes.
Citation
Thin Solid Films

Keywords

film inhomogeneities, hot-wire deposition

Citation

Gallagher, A. (2001), Some Physics and Chemistry of Hot-Wire Deposition, Thin Solid Films (Accessed November 8, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created July 1, 2001, Updated February 17, 2017