Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Study of Low-Frequency Charge Pumping on Thin Stacked Dielectrics

Published

Author(s)

C E. Weintraub, Eric M. Vogel, John R. Hauser, Nian Yang, Veena Misra, J. J. Wortman, J J. Ganem, Pascal Masson
Citation
IEEE Transactions on Electron Devices
Volume
48
Issue
12

Keywords

Charge Pumping, Dielectric, Interface State Nitrogen, MOS, Tunneling

Citation

Weintraub, C. , Vogel, E. , Hauser, J. , Yang, N. , Misra, V. , Wortman, J. , Ganem, J. and Masson, P. (2001), Study of Low-Frequency Charge Pumping on Thin Stacked Dielectrics, IEEE Transactions on Electron Devices (Accessed November 8, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created November 30, 2001, Updated October 12, 2021