Myers, D.
(1980),
Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication:, , National Institute of Standards and Technology, Gaithersburg, MD, [online], https://doi.org/10.6028/NBS.SP.400-60
(Accessed November 8, 2024)
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Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication:
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- NBS SP 400-60
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NBS SP 400-60
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NIST Pubs
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Created January 1, 1980, Updated May 19, 2023