Mastro, M.
, Kryliouk, O.
, Reed, M.
, Anderson, T.
, Davydov, A.
and Shapiro, A.
(2001),
Thermal Stability of MOCVD and HVPE GaN Layers in H<sub>2</sub>, HCl, NH<sub>3</sub> and N<sub>2</sub>, Physica Status Solidi A-Applications and Materials Science
(Accessed December 26, 2024)
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Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2
Published
Author(s)
M A. Mastro, O M. Kryliouk, M D. Reed, T J. Anderson, ,
Abstract
This work represents a complete study of GaN annealed in H2, HCl, NH3 and N2. The GaN thermal behavior was evaluated by comparison of MOCVD and HVPE samples. The MOCVD films were observed to undergo dissociative sublimation mechanism with only gaseous species forming, while the HVPE films reacted with ambient gasses to form condensed Ga in addition to the gaseous species. Differences in crystal quality for MOCVD and HVPE samples resulting from the different growth mechanisms account for the observed difference.Citation
Physica Status Solidi A-Applications and Materials Science
Volume
188
Issue
No. 1
Pub Type
Journals
Keywords
gallium nitride, pressure, thermal stability
Citation
Issues
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Created October 31, 2001, Updated October 12, 2021