Threading dislocations in Epitaxial InN Thin Films Grown on (0001) Sapphire With a GaN Buffer Layer

Published

October 1, 2003

Author(s)

C J. Lu, Leonid A. Bendersky, H Lu, J Schaff

Abstract

The density and types of dislocations in InN thin films grown on (0001) sapphire with a GaN buffer layer were characterized by transmission electron microscopy. Perfect edge threading dislocations (TDs) with 1/3 Burgers vectors are predominant defects, which penetrate the GaN and InN layers. Pure screw and mixed TDs were also observed. Overall the TD density decreases during film growth due to annihilation and fusion. The TD density in GaN is as high as ~ 1.5 x 10 (superscript 11) cm(superscript -2), and it drops rapidly to ~ 2.2 x 10(superscript 10) cm(superscript -2) in InN films. Most halfloops in GaN are connected with misfit dislocation segments at the InN/GaN interface and formed loops, while some TD segments threaded the interface. Many halfloops, while some TD segments threaded the interface. Many halfloops were also generated during the initial stages of the InN growth.

Citation

Applied Physics Letters

Volume

83

Issue

No. 14

Pub Type

Journals

Keywords

Dislocation, InN, TEM, thin film

Citation

Lu, C. , Bendersky, L. , Lu, H. and Schaff, J. (2003), Threading dislocations in Epitaxial InN Thin Films Grown on (0001) Sapphire With a GaN Buffer Layer, Applied Physics Letters (Accessed November 8, 2024)