Direct Electron LP

Purpose

Direct Electron LP will develop a new high-speed camera for high-resolution electron backscatter diffraction (HR EBSD) and transmission Kikuchi diffraction (TKD), which will significantly expand the materials properties that can be probed in a scanning electron microscope (SEM). The camera will include a novel high-resolution (4k × 4k) direct detection sensor optimized for detection of low-energy electrons (~3 – 30 keV). The sensor will be a monolithic device, with no gaps or inactive areas.

Activities to be Performed

The awardee will demonstrate the feasibility of using a large-format direct detection sensor to perform a variety of measurements using HR EBSD and TKD, and then develop and test a functional prototype of the new high-resolution sensor and high-speed camera system.

Expected Outcomes

A new camera system compatible with a range of commercial SEM equipment that enables new materials characterization methods.

Intended Beneficiaries

U.S. semiconductor industry using materials characterization during development, quality control, and failure analysis for current and next-generation devices. 

Subrecipient Activities

The recipient plans to subaward funds for facilities access for demonstrating and testing prototypes, and for technical consulting related to CMOS image sensor design and HR EBSD image processing.