This project will develop next-generation large-signal/high-power transistor modeling techniques to create highly accurate models for RF-Microwave circuit design simulators.
The awardee will designing and fabricating transistor modeling cells, developing on-wafer and in-fixture model validation vehicles, and creating calibration kits to enable highly accurate large-signal time-domain load-pull transistor measurements. After development they’ll seek to characterize the modeling cell and develop advanced large-signal models.
The technology will enhance the efficiency and performance of monolithic microwave integrated circuit/radio frequency integrated circuit sold-state power amplifiers.
Researchers and U.S. manufacturers of phased-array radar, communications, electronic warfare, satellites.
The recipient does not intend to subaward funds.
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