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Electronics

Semiconductors

Projects/Programs

Keyword

Organizational Unit

Polymers for Next-Generation Lithography

Completed

We work closely with the semiconductor industry to develop and apply measurements with high-spatial and chemically-specific resolution to elucidate the critical materials properties and process kinetics at nanometer scales that are needed to advance next-generation photolithography, including both

Power Conditioning Systems for Renewables, Storage, and Microgrids

Ongoing

Objective: To establish standards and measurement methods, and test for smart grid and microgrid Power Conditioning Systems needed to transition from today’s low penetration of nondispatchable intermittent renewable energy sources to flexible grid operations that can actively adjust to varying grid

A 3" wafer is seen concentric with the lower plasma electrode.

Precision Materials for Quantum Devices

Ongoing

MBE System Our fabrication system is composed of ultra-high vacuum (UHV) chambers that support the in-vacuum exchange of 75 mm wafers without exposure to air as seen in Figure 1. These chambers are: (1) a deposition chamber with electron gun deposition, UHV compatible sputter guns, in situ shadow

Prototyping Platforms for Emerging Technologies

Ongoing

Emerging technologies aim to overcome traditional memory limitations with higher density, lower power consumption, faster read/write speeds, better endurance, and lower cost [2]. Many new candidate memory elements are analog or stochastic, requiring new testing infrastructure, and the context of

Pushing the Limits of Measurement Accuracy in Atom Probe Mass Spectrometry

Ongoing

Isotopic Analysis for Isotopic Geochemistry, Nuclear Safety, and Materials Science : Atom probe tomography has a significant advantage over other forms of mass spectrometry, which typically have a combined efficiency < 5%, in terms of ionization and detection efficiency. Commercial atom probe

Quantitative Assessment of Defects and Related Modeling Parameters in GaN Semiconductor Devices

Ongoing

Key performance metrics like breakdown voltage, switching speed, gain stability, and maximum operating frequency are limited by material defects in AlGaN/GaN devices. Defects also play a role in device degradation over time. Although these materials have been studied for over twenty years with a

Reliability Metrologies for Advanced Electronic Interconnects

Completed

High-performance devices, such as microprocessors and memory chips, are typically composed of structures with strict dimensional tolerances and geometries and are made up of various materials, all in close proximity in a three-dimensional system. Material interactions lead to reliability issues such

Semiconductor Nanowire Metrology: Electronics, Photonics, and Sensors

Completed

One of the key issues hampering progress in semiconductor nanotechnology is the absence of standardized nanostructures. We address this need through the controlled fabrication and assembly of semiconductor nanowire test structures with well-defined properties. To achieve this, we have manufactured

Smart Grid System Testbed Facility

Completed

Objective: To develop an advanced multi-mode interacting measurement testbed to facilitate implementation, validation, and full characterization of smart grid interoperability standards and smart grid performance. What is the technical idea? An interacting multi-mode measurement and characterization

Individual quantum center creation, characterization, quantum control, efficient collection and readout.

Spectroscopy and Application of Solid-State Quantum Centers

Ongoing

Quantum color centers in wide-bandgap semiconductors have spin and optical degrees of freedom, which can be leveraged for applications such as sensing and single-photon generation. In materials like diamond and silicon carbide, long spin lifetimes and quantum coherence times enable sensitive

Strain Measurement for Semiconductor Devices

Ongoing

Mechanical strain is hugely important to semiconductor devices and packages while also being difficult to measure accurately. Strain is engineered into CMOS channels to improve carrier mobility for higher performance at lower power but is also intrinsically present from manufacturing processes where

Images depicting an advanced analysis of HR-EBSD data

Strain Measurement for Semiconductor Devices and Packages

Ongoing

Strain is a critical parameter that influences both electrical and mechanical failures of devices, however, measuring strain in complex 3D geometries and vanishingly small feature sizes remains a challenge for manufacturers. Data provided by strain measurements can be used to validate computational

Sub-nanoscale electron microscopy of complex nanostructures

Ongoing

The properties of advance materials are becoming ever more reliant on the ability to manipulate their chemistry and structure at very fine length scales. For example, the relevant feature sizes in state-of-the-art transistors continue to decrease, even as the complexity of the architectures employed

Fig. 1. Time re-Envisioned: Not a biproduct of computation but the domain in which information is encoded. Leads to different mathematical functions becoming energy efficient primitives.

Temporal Computing

Ongoing

In standard integrated circuits, information that is coded as ones and zeros is implemented by voltages on wires being high or low. The circuits consume energy during transitions between these voltages. Binary numbers have a voltage per bit so there are a lot of transitions each time a number

Theory and Modeling of Materials for Renewable Energy

Completed

Nanostructured materials offer potential benefits for a range of renewable energy applications that rely critically on interfaces for separating charges, including photovoltaics, thermoelectrics, and electrochemical energy storage. The use of nanostructures allows scientists and engineers to

Theory of the optical properties of materials

Ongoing

Around 1998, first-principles calculation of optical constants and dielectric response began to include excitonic effects. Beginning with simple, wide-gap insulators and semiconductors, the field has progressed to studying more complex materials, clusters, and so forth. In the area of core

Thermoreflectance Thermal Property Measurements for Heterogeneously Integrated Materials and Power Electronics

Ongoing

Thermal conductivity, heat capacity, and interface conductance are fundamental properties that govern semiconductor microelectronic devices, from materials discovery, to design and modeling, thermal management and device performance, and ultimately device reliability and operational lifespan. These

Thin Film Electronics (Archived)

Completed

Today's electronics have reached a point where sheer computation power has yielded to combined form and function as the key driver of large consumer markets. The demand for portable and pervasive electronics with greater functionality promises significant changes over the next decades in how society

Time-resolved Emission Microscopy for Circuit Evaluation and Failure Analysis

Ongoing

When a new integrated circuit is fabricated, it is necessary to measure the chip with microscopy techniques such as photon emission microscopy, which look at infrared photons emitted by electrons accelerated in transistor channels. TREM, also referred to as picosecond imaging circuit analysis, is a

Training and optimization of hardware neural networks

Ongoing

The goal of this project is to develop a general method that can train many different types of neural networks, and to demonstrate and evaluate their performance on new emerging hardware. We aim to develop and demonstrate training on diverse hardware platforms, and in the presence of realistic noise

SRM 3452 certified Seebeck coefficient data

Transport Property Measurements for Semiconductors and Energy Materials

Ongoing

The properties of materials and interfaces that govern reliability, performance, and thermal transport in advanced microelectronic packages are not fully characterized or understood, especially at device length scales wherein properties may differ significantly from bulk or literature values

Ultrafast Spectroscopy to Advance Microelectronics

Ongoing

Continued advancement in microelectronics, including analog and digital electronics, power electronics, optics and photonics, and micromechanics for memory, processing, sensing, and communications as defined by the OSTP “National Strategy on Microelectronics Research,” requires knowledge of material

Universal Microscopy Standards

Ongoing

Microscopy standards that are available today have inadequate performance characteristics. As device linewidths decrease toward physical limits, the international roadmap of devices and systems (IRDS) has set uncertainty targets by the year 2025. This target is hard to hit, challenging the industry

NIST Headquarters
-Creating Helpful Incentives to Produce Semiconductors for America (CHIPS)
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