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NanoFab Tool: Sandvik LPCVD LTO
Photo of the Sandvik anneal furnaces
Credit:
NIST
The Sandvik low pressure chemical vapor deposition (LPCVD) of silicon oxide furnace supports low temperature oxide (LTO) on substrates ranging from small chips to wafer diameters up to 150 mm. All samples require SC1 and SC2 cleans prior to processing.
Specifications/Capabilities
- Automatic recipe controller using Variable Parameter Table (VPT)
- Maximum Temperature: 700 °C.
- Maximum Deposition Thickness: 5 µm.
- Standard processes:
- Low temperature oxide deposition
- Wafer diameters: 75 mm (3 in), 100 mm (4 in), and 150 mm (6 in)
- Small pieces supported: Yes
Typical Applications
- Inter-level metal isolation
- Insulating layer
- Sidewall coating and trench refill
- Diffusion or implantation mask
Created April 10, 2019, Updated July 27, 2023