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NanoFab Tool: Unaxis Shuttleline Inductively Coupled Plasma (ICP) Etcher
Photograph of the Unaxis Shuttleline inductively coupled plasma etcher.
The Unaxis Shuttleline inductively coupled plasma (ICP) etcher is a general purpose chlorine reactive ion etcher. The high power ICP source combined with low vacuum operating pressure provides users with smooth anisotropic etch feature depths ranging from several micrometers to a few nanometers. The system can accommodate substrates ranging from 150 mm diameter wafers down to small pieces.
Specifications/Capabilities
- Inductively coupled plasma (ICP) power source: up to 2500 W at 2.4 MHz.
- Radio Frequency (RF) power source: up to 300 W at 13.56 MHz.
- Unique process gases: chlorine and boron trichloride.
- Anisotropic etching of silicon.
Usage Information
Supported Sample Sizes
- Maximum wafer diameter: 150 mm (6 in).
- Wafer diameters: 75 mm (3 in), 100 mm (4 in), and 150 mm (6 in).
- Small pieces supported: Yes.