Yu, L.
, Cheung, K.
, Dunne, G.
, Matocha, K.
, Suehle, J.
and Sheng, K.
(2009),
Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
(Accessed December 26, 2024)
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Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
Published
Author(s)
, , Greg Dunne, Kevin Matocha, , Kuang Sheng
Pub Type
Talks
Citation
Issues
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Created October 14, 2009, Updated February 19, 2017