Wu, W.
, Lin, E.
, Lin, Q.
and Angelopoulos, M.
(2000),
Small-Angle Neutron Scattering Measurements of Nanoscale Lithographic Features, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=851751
(Accessed July 18, 2024)
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Small-Angle Neutron Scattering Measurements of Nanoscale Lithographic Features
Published
Author(s)
, , Q Lin, M Angelopoulos
Abstract
The continuing decrease in feature sizes in the semiconductor and other nanofabriation industries has placed increasingly stringent demands on current microscopy-based techniques to precisely measure both the critical dimensions and the quality (i.e. line-edge roughness) of these structures. Small-angle neutron scattering (SANS) experiments provide a quick, non-destructive, and quantitative measurement of the three-dimensional shape and quality of lithographically prepared structures as fabricated on a silicon substrate. We demonstrate the application of SANS for the characterization of nanoscale structures using periodic 150 nm parallel lines prepared using standard 248 nm photolithographic processes.Citation
Journal of Applied Physics
Volume
88
Issue
No. 12
Pub Type
Journals
Download Paper
Keywords
critical dimension, line-edge roughness, lithography, nanofabrication, small angle neutron scattering
Citation
Issues
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Created December 1, 2000, Updated February 17, 2017