Steiner, B.
, Tseng, W.
, Comas, J.
, Laor, U.
and Dobbyn, R.
(1993),
Defect Formation in Semiconductor Layers During Epitaxial Growth, Journal of Crystal Growth
(Accessed November 8, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Defect Formation in Semiconductor Layers During Epitaxial Growth
Published
Author(s)
B. Steiner, W. F. Tseng, J. Comas, U. Laor, R. G. Dobbyn
Citation
Journal of Crystal Growth
Volume
128
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created July 31, 1993, Updated October 12, 2021