Electrical Detection of Defects in SIMOX Buried Oxides: Pipes and Precipitates

Published

October 5, 1998

Author(s)

Peter Roitman, Monica D. Edelstein, S. J. Krause

Abstract

Two defect types have been identified in the buried oxide of low dose SIMOX: conductive silicon paths through the buried oxide (pipes) and silicon precipitates in the buried oxide. Both types are caused by the same general mechanism; the tendency of the Si-SiO₂ system at high temperature to separate into regions of Si and SiO₂ rather then forming SiO_x. Below an oxygen dose of approximately} 4 x 1017 cm^-2, the buried oxide is not continuous and as the dose is lowered the implanted region becomes a layer of SiO₂ precipitates. Above the dose of approximately} 4 x 1017 cm^-2, the buried oxide is continuous, but Si precipitates approximately} 50 nm thick are present in the oxide.

Conference Dates

October 5-8, 1998

Conference Location

Stuart, FL, USA

Conference Title

IEEE International SOI Conference

Pub Type

Conferences

Keywords

buried oxide, silicon, SIMOX, SOI, SEM, TEM

Citation

Roitman, P. , Edelstein, M. and Krause, S. (1998), Electrical Detection of Defects in SIMOX Buried Oxides: Pipes and Precipitates, IEEE International SOI Conference, Stuart, FL, USA (Accessed March 13, 2025)