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Physical Measurement Laboratory

2013 FCMN Presentations

Invited Oral Presentations

Poster Presentations

Because of the large interest in the presentations given at this Conference and as a service to the semiconductor community, the organizers have made the slides from many of the talks and posters presented available here. These slides should be considered the sole property of the speaker/presenter. Please do not alter or reproduce any of the slides presented.

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The Conference organizers would like to thank each of the presenters who have made their slides available!

A Mirror-Corrected Scanning Electron Microscope
Michael Steigerwald, Carl Zeiss

Nanoscale Thermo and Mechanical Characterization

Adhesion and Thermo-Mechanical Reliability in Emerging Thin Film Device and Energy TechnologiesReinhold Dauskardt, Stanford University

Nano-Scale Characterization of ULK and BEoL Structures: Modulus Mapping and Wedge Indentation Adhesion MeasurementsChristoph Sander, Fraunhofer

3D

Metrology Requirements for Manufacturing 3D Integrated Circuits
Martin Schrems, AMS

Multi-Scale Resolution 3D X-ray Imaging for 3D IC Process Development and Failure AnalysisMichael Fesser, Xradia

Novel Characterization Methods

Nanoscale Acoustics, Energy Flow, and Imaging Using Tabletop Coherent EUV High Harmonic Light SourcesMargaret M. Murnane, Univ. of Colorado/Boulder

The Uniqueness and Impact of Using Neutrons to Characterize Semiconductor MaterialsGreg Downing, NIST Neutron Center

Probing the Underlying Physics of Nanoelectronics with Raman SpectroscopyAngela Hight Walker, NIST

Nanoscale Electrical Microscopy
Wilfried Vandervorst, IMEC

Next Generation Defect Metrology

Scatterfield Microscopy, Review of Techniques that Push the Fundamental Limits of Optical Defect MetrologyRick Silver, NIST

Frontiers in Defect DetectionLothar Pfitzner, Fraunhofer

Mirror Electron Microscopy for High-Speed and Highly Sensitive Defect Inspection
Masaki Hasegawa, Hitachi

Extreme CMOS Manufacturing

Critical Metrology for Advanced CMOS ManufacturingZhiyong Ma and Markus Kuhn, Intel

Beyond CMOS Metrology

Metrology for a Post-CMOS World: an Overview
Tom Theis, NRI

X-ray Photo Electron Spectroscopy of Nanomaterials–Graphene and III-V InterfacesRobert M. Wallace, UT Dallas

Issues with Characterization of Graphene Field Effect TransistorsEric Vogel, GIT

Overview on the Characterization for RRAM TechnologiesAmal Chabli, CEA Leti

Microwave Measurements of Spintronic DevicesMatthew Pufall, NIST

Metrology for Patterning

Overview of Next Generation Lithography - Advanced Patterning, EUV & Self AssemblyMark Neisser, SEMATECH

Metrology Tools as Basis for Photo Mask Repair and Mask Performance ImprovementKlaus Edinger, Carl Zeiss

Atom Probe Tomography: a Special Frontiers Session

Frontiers of Atom Probe MicroscopyKaren Henry, Intel

Localized Light Absorption by Nanoscale Semiconducting Tips in Laser-Assisted Atom Probe TomographyJanuz Bogdanowicz, IMEC

Spatial Data Reconstruction for Atom Probe Tomography: a Brief PerspectiveDavid Larson, Cameca Instruments, Inc.

Novel Evaporation Control ConceptsTy Prosa, Cameca Instruments, Inc.

Atom Probe and (S)TEM Analysis of Semiconductor and Oxide NanostructuresDavid Diercks and Brian Gorman, Colorado School of Mines

Poster Presentations

TU-01, Real-Time Spectroscopic Ellipsometry in Atomic Layer Deposition Process
Han Wang, Xiaoqiang Jiang, and Brian G. Willis
Department of Chemical, Materials & Biomolecular Engineering, University of Connecticut, Storrs, Connecticut 06269

TU-02, Measure the Electron and Hole Contact Resistance in Gated Kelvin Structure
Hui Yuan^1,2, Curt A. Richter², Hao Zhu^1,2, Haitao Li^1,2, Oleg Kirillov², Dimitris Ioannou¹, and Qiliang Li^1

1Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030
²Semiconductor and Dimensional Metrology Division, NIST, Gaithersburg, MD 20899-8120

TU-03, Transmission Electron Backscatter Diffraction (T-EBSD) for Characterizing Ultrathin Films in the SEMKatherine P. Rice, Roy H. Geiss, and Robert R. KellerApplied Chemicals and Materials Division, National Institute of Standards and Technology, Boulder, CO 80305

TU-04, Spatially-Resolved Dopant Characterization with a Scanning Microwave MicroscopeT. Mitch Wallis, Atif Imtiaz, Alexandra E. Curtin, Pavel Kabos, Matthew D. Brubaker, Norman A. Sanford, and Kris A. BertnessNational Institute of Standards and Technology (NIST), 325 Broadway, Boulder, Colorado 80305

TU-05, Modeling Scanning Electron Microscope Measurements with ChargingJohn S. VillarrubiaNational Institute of Standards and Technology, Semiconductor and Dimensional Metrology Division, Stop 8212, 100 Bureau Dr., Gaithersburg, MD 20899

TU-06, Automated STEM and TEM Metrology of Advanced Semiconductor DevicesMark J. Williamson, Michael Strauss, and David HorspoolFEI Company, 5350 NE Dawson Creek Drive, Hillsboro, Oregon, USA

TU-07, Contamination-Free Scanning Electron and Helium Ion MicroscopyK.P. Purushotham, András E. Vladár, and Michael T. PostekNational Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899-8212, USA

TU-08, Measurement of Silica Particles by Transmission Electron MicroscopeF. Kole, Y. Guan, and P. KonicekVLSI Standards, Inc., Five Technology Drive, Milpitas, California 95035 USA

TU-09, Applications of Electron Tomography to Advanced CMOS Process TechnologyHugh L. Porter1 and Jeremy D. Russell21SEMATECH and GLOBALFOUNDRIES, 257 Fuller Road, Suite 2200, Albany, NY 122032GLOBALFOUNDRIES, 400 Stone Break Extension, Malta, NY 12020

TU-10, Quantitative Characterization and Applications of 193 nm Scatterfield Microscope
M. Y. Sohn^1,2, B. M. Barnes¹, and R. M. Silver^1

1National Institute of Standards and Technology (100 Bureau Drive, Gaithersburg, MD)
²Hyperion Biotechnology, Inc. (12002 Warfield, Suite 101, San Antonio, TX)

TU-11, 3-D Optical Metrology of Finite sub-20 nm Dense Arrays using Fourier Domain NormalizationJ. Qin, H. Zhou, B. M. Barnes, R. Dixson, and R. M. SilverSemiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, 100 Bureau Dr. MS 8212, Gaithersburg, MD USA 20899-8212

TU-12, Multi-Technique Approach for Determination of Crystalline Phase and Electronic Structure of Atomic Layer Deposited Hf1-xZrxO2Relja Vasic1, Steven Consiglio2, Robert Clark2, Kandabara Tapily2, Manasa Medikonda1, Gangadhara Raja Muthinti1, Eric Bersch3, Gert Leusink2, and Alain Diebold11College of Nanoscale Science and Engineering, University at Albany, 257 Fuller Rd., Albany, NY 122032TEL Technology Center, America, LLC, 255 Fuller Rd., Albany, NY 122033SEMATECH, 257 Fuller Rd., Albany, NY 12203

TU-13, Quantification of Hafnium in Hafnium Oxide Film by Isotope Dilution Neutron Activation AnalysisToshiko Takatsuka, Kouichi Hirata, Kenji Ito, Naoko Nonose, and Tsutomu MiuraNational Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan

TU-14, Complementary Metrology - A Prerequisite for Reliable and Traceable Characterization of Surfaces and NanolayersAndreas Nutsch1,2, Burkhard Beckhoff1, and Jaap Van Den Berg31Physikalisch-Technische Bundesanstalt, Abbestr 2-12, 10587, Berlin, Germany2previously Fraunhofer IISB, Schottkystrasse 10, 91058 Erlangen, Germany3University of Huddersfield, Huddersfield, HD1 3DH United Kingdom

TU-15, SIMS Correction and Depth Profiling of Ion Implantations Using Grazing Incidence XRFPhilipp Hönicke1, Burkhard Beckhoff1, Yves Kayser2, and Sven Kayser31Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin, Germany2Paul Scherrer Institut, 5232 Villigen PSI, Switzerland3ION-TOF GmbH, Heisenbergstr. 15, 48149 Münster, German

TU-16, Towards Nanoelectronics Metrology with a Laboratory Set-Up in the Soft X-Ray RangeD. Grötzsch1, B. Kanngieﬂer1, I. Mantouvalou1, C. Herzog1, K. Witte1, M. Spanier1, J. Lubeck2, P. Hönicke2, and B. Beckhoff21Technische Universität Berlin, Institut für Optik und Atomare Physik, Hardenbergstr. 36, 10623 Berlin2Physikalisch Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin, Germany

TU-17, Local Tunneling Measurements of in-situ Gated Topological Insulators
Jeonghoon Ha^1,2,3, Niv Levy^1,2, Tong Zhang^1,2, Young Kuk³, and Joseph A. Stroscio^1

1Center for Nanoscale Science and Technology, NIST, Gaithersburg, MD 20899, USA
²Maryland NanoCenter, University of Maryland, College Park, MD 20742, USA
³Department of Physics and Astronomy, Seoul National University, Seoul, 151-747, Korea

TU-18, Comprehensive Characterization and Understanding of Micro-Porous Low-κ Interconnects Using PALS, EP and XRRD. Yang1, R.L. Opila1, G. Jiang2, V. Pallem2, D.W. Gidley3, and N. Bhargava41Department of Materials Science and Engineering, University of Delaware, Newark, Delaware2Delaware Research & Technology Center, Air Liquide America, Newark, Delaware3Department of Physics, University of Michigan, Ann Arbor, Michigan4Department of Electrical Engineering, University of Delaware, Newark, Delaware

TU-19, Direct Analysis of Undiluted Photoresist with Inline Autodilution Inductively Coupled Plasma Mass SpectrometryHyun-Kee Hong1, J. S. Lee2, Austin Schultz2, Paul Field2, and Daniel Wiederin21Samsung Electronics Co. Ltd., San #5, Banwol-Dong, Hwasung City, Gyeonggi-Do, Korea 445-7012Elemental Scientific, 1500 North 24th Street Omaha, NE 68110, USA

TU-20, Extraction of Interfacial Doping Density in Metal/Silicon Contacts
Khaled Ahmed
Intermolecular, Inc., 3011 North First Street, San Jose, California 95134, USA

TU-21, Sub-Surface Metrology Using X-Ray Emitting AFM Probes
Faisal K. Chowdhury, H. Pourzand, and M. Tabib-Azar
Dept. of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, USA, 84112

TU-22, Work Function Characterization Of Si_1-xGe_x Heterostructure Using Kelvin Force Microscopy and Electron Spectroscopy
Sylvain Pouch, Nicolas Chevalier, Denis Mariolle, Eugenie Martinez, Pradeep Kumar, Olivier Renault, Julien Morin, Jean-Michel Hartmann, and Łukasz Borowik
CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9, France

TU-23, Measurement Uncertainties in MEMS Kinematics by Super-Resolution Fluorescence MicroscopyCraig D. McGray, Samuel M. Stavis, and Jon GeistNational Institute of Standards and Technology, Gaithersburg, MD 20899

TU-24, Sample Alignment of X-Ray Reflectometry Using Thickness and Density From Certified Reference MaterialsDonald Windover1, David L Gil1, Yasushi Azuma2, and Toshiyuki Fujimoto21National Institute of Standards and Technology, Gaithersburg, MD 20899, USA2National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8568, Japan

WE-01, A Versatile Variable Field Module for Asylum Cypher Scanning Probe SystemHongxue Liu1, Ryan Comes1, Jiwei Lu1, Stuart Wolf1, Jim Hodgson2, and Maarten Rutgers21Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 229042Asylum Research, Santa Barbara, CA 93117

WE-02, Metrology for Organic Monolayers on Cobalt SurfacesS. Pookpanratana1, L. K. Lydecker1,2, H.- J. Jang1, C. A. Richter1, and C. A. Hacker11Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology2College of Nanoscale Science and Engineering, University at Albany

WE-03, Evaluation of Possible Standards for X-Ray ReflectometryP. DeHaven1, E. Nolot2, A. Madan1, A. Michallet3, S. Favier3, D. Le Cunff3, and R. Duru31IBM Corporation, 2070 Route 1 52, Hopewell Junction, NY USA2CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France.3ST Microelectronics - 850, Rue Jean Monnet, 38926 Crolles Cedex, France.

WE-04, Metrology Studies with NEMO, a Multimillion Atom Simulation ToolG. Klimeck1, J. E. Fonseca1, R. Rahman1, N. Kharche2,3, G. P. Lansbergen4, and S. Rogge51Network for Computational Nanotechnology, Purdue University, West Lafayette, IN USA2Department of Physics, Rensselaer Polytechnic Institute, Troy, NY, USA3Brookhaven National Laboratory, Upton, NY, USA4Kavli Institute of Nanoscience, Delft University of Technology, The Netherlands5Centre for Quantum Computation & Communication Technology, School of Physics, The University of New South Wales Sydney, Australia

WE-05, Impact of X-Ray Synchrotron Studies on NanoelectronicsJonathan Lang, David Keavney, Volker Rose, Ross Harder, Yuxin Wang, Jon Tischler, Wenjun Liu, Jin Wang, Tao Sun, Steve Heald, Albert Macrander, Lahsen Assoufid, and Jyotsana LalX-Ray Science Division, Advanced Photon Source, Argonne National Laboratory, Argonne, IL-60439, USA

WE-06, The MEMS 5-in-1 Test Chips (Reference Materials 8096 and 8097)Janet Cassard1, Jon Geist1, Craig McGray2, Richard A. Allen1, Muhammad Afridi3, Brian Nablo1, Michael Gaitan1, and David G. Seiler11Semiconductor and Dimensional Metrology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899-81202Modern Microsystems, Inc., 11522 Soward Dr., Silver Spring, MD 209023Potomac Networks, 1301 Delaware Avenue SW #N716, Washington DC 20024

WE-07, Contact Resonance AFM on TiN-Low-k Dielectric Films and PatternsGheorghe Stan1,2, Lawrence Friedman1, Robert Cook1, Sean King3, Alan Myers4, Marc van Veenhuizen4, and Chris Jezewski41Material Measurement Laboratory, NIST, Gaithersburg, MD2Department of Mechanical Engineering, University of Maryland, College Park, MD3Logic Technology Development, Intel Corporation, Hillsboro, OR4Components Research, Intel Coporation, Hillsboro

WE-08, Adhesion Characterization of SiCN/SiO2 in BEOL and Thin Si/Passivation For TSV Integration Using Nanoscratch TechniqueGuohua Wei, Sam Ireland, Junting Liu-Norrod, Jaspreet Gandhi, Irina Vasilyeva, Anurag Jindal, Rita Klein, Tom Mendiola, Harold Krasinski, David Fillmore, and Shifeng LuMicron Technology, Inc., 8000 S. Federal Way, Boise, ID, USA

WE-09, Analysis of Local Stress Distribution in a Metal Gate MOSFET with a New Raman Simulation MethodTetsuya Tada1, Vladimir Poborchii1, Hiroshi Arimoto1, Akira Satoh1, Koichi Fukuda1, Kazuhisa Fujita2, and Toshihiko Kanayama11National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan2ASTOM R&D, 2-3-13 Minami, Wako-shi, Saitama 351-0104 Japan

WE-10, Automated Strain Measurement Using Nanobeam Diffraction Coupled with PrecessionA. Darbal1, R. Narayan1, C. Vartuli2, G. Lian2, S. Nicolopoulos3, and J. K. Weiss11AppFive, LLC, 1095 W. Rio Salado Pkwy, Suite 110, Tempe, AZ 85281, USA2Texas Instruments, 13121 TI Boulevard, Dallas, TX 75243, USA3NanoMEGAS SPRL, Blvd Edmond Machtens 79, B-1080 Brussels, Belgium

WE-11, Optical Dynamic Picocalorimeter for Fast Thermodynamic Measurements
Brian G. Burke and David A. LaVan
Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland, USA

WE-12, Accuracy and Resolution of Nanoscale Strain Measurement Techniques
Will Osborn¹, Lawrence Freidman¹, Mark Vaudin¹, Steve Stranick¹, Michael Gaither¹, Justin M. Gorham¹, Victor Vartanian², and Robert Cook^1

1Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, MD
²3D enablement Center Metrology, Sematech, Albany, NY

WE-13, Full Wafer Spatially Resolved Adhesion Testing of ULK-Films Without Sample PreparationUde D. Hangen, Andy Romano, and David VodnickHysitron, Inc., 9625 West 76th Street, Minneapolis, MN 55344

WE-14, Design of Test Structure for 3D-Stacked Integrated Circuits (3D-SiCs) MetrologyLin You, Jung-Joon Ahn, and Joseph J. KopanskiSemiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA

WE-15, A New Prognostic Tool for TSV Reliability Assessment Using RF SignalsChukwudi Okoro1, Pavel Kabos1, June W. Lau1, Jan Obrzut1, Klaus Hummler2, and Yaw S. Obeng11National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 208992SEMATECH, 257 Fuller Road, Albany, NY 12203

WE-16, TSV Reveal Height and Bump Dimension Metrology by the TSOM Method: from Nanometer to Micrometer ScaleVictor Vartanian1, Ravikiran Attota2, Steve Olson3, Robert Edgeworth4, Iqbal Ali1, Craig Huffman1, Pete Moschak3, Harry Lazier3, and Elizabeth Lorenzini31SEMATECH, Albany, NY, USA2Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD, USA3College of Nanoscale Science and Engineering (CNSE), SUNY Albany, assignee to SEMATECH4Intel assignee to SEMATECH

WE-17, Defect Metrology of Epitaxial Ge on Patterned Si Wafers Using an Inline HRXRD ToolM. Wormington1, P.Y. Hung2, M.-H. Wong2, C.T. Schamp3, A. Giladi4, M. Klinov4 , W.-E Wang2, G. Bersuker2, P. D. Kirsch2, and R. Jammy21Jordan Valley Semiconductors, Austin, TX 78744, USA2SEMATECH, Albany, NY 12203, USA3Novati Technologies, Austin, TX 787414Jordan Valley Semiconductors, Migdal HaíEmek 23100, Israel

WE-18, XPS Tool Matching and Optimization for EUV Optics Contamination StudiesYudhishthir Kandel1, Mihir Upadhyaya1, Gregory Denbeaux1, and Cecilia Montgomery21College of Nanoscale Science and Engineering, University at Albany, SUNY, 257 Fuller Rd, Albany, NY 122032SEMATECH, 255 Fuller Rd, Albany, NY 12203

WE-19, Cross Spectrum Noise Spectroscopy for Deep Level Trap Detection in Nano-Scale Semiconductor DevicesDeepak Sharma1,2, Sergiy Krylyuk1,3, Abhishek Motayed1,3, Qiliang Li1,2, and Albert V. Davydov11National Institute of Standards and Technology, Gaithersburg, MD 20899 USA2Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030 USA3IREAP, University of Maryland, College Park, MD 20742 USA

WE-20, Development of High Resolution Topographic Characterization at Die Scale by InterferometryF. Dettoni1, C. Beitia2, S. Gaillard1, O. Hinsinger1, F. Bertin2, and M. Rivoire11STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France2CEA, Leti, campus MINATEC, 17, rue des Martyrs, 38054 Grenoble Cedex 9, France

WE-21, Development of Three-Dimensional Raman Spectra Analysis System for TCAD Stress Simulation in FinFET StructuresHiroshi Arimoto1, Akira Satoh1, Vladimir Poborchii1, Tetsuya Tada1, Koichi Fukuda1, Koji Usuda2, Kazuhisa Fujita3, and Toshihiko Kanayama11National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki, Japan2Green Nanoelectronics Center (GNC), AIST West, 16-1 Onogawa, Tsukuba, Ibaraki, Japan3ASTOM R&D, 2-3-13 Minami, Wako-shi, Saitama, Japan

WE-22, Characterization of SiO2/Si Interface Quality by PhotoluminescenceShiu-Ko Jang Jian1, Chih-Cherng Jeng1, Ting-Chun Wang1, Chih-Mu Huang1, Ying-Lang Wang1, and Woo Sik Yoo21Taiwan Semiconductor Manufacturing Company, Ltd., No. 1-1, Nan-Ke Rd., Science-Based Industrial Park, Tainan, 741-44, Taiwan2WaferMasters, Inc., 254 East Gish Road, San Jose, CA 95112, USA

TH-01, Complementary Methodologies for Thin Film Characterization in One Tool - a Novel Instrumentation for 450 mm WafersIna Holfelder1, Philipp Hönicke1, Andreas Nutsch1,2, and Burkhard Beckhoff11Physikalisch-Technische Bundesanstalt, Abbestr 2-12, 10587, Berlin, Germany2previously Fraunhofer IISB, Schottkystrasse 10, 91058 Erlangen, Germany

TH-02, Soft X-Ray Characterization of DSA Block CopolymersDaniel Sunday, Wen-Li Wu, and R. Joseph KlineNational Institute of Standards and Technology (NIST), Gaithersburg MD

TH-03, HAXPES for Non-Destructive Analysis of Chemistry at Buried Interfaces in Advanced Gate StacksPaul Risterucci1, Eugénie Martinez1, Rachid Boujamaa2, Jörg Zegenhagen3, Blanka Detlefs3, Mickael Gros-Jean2, Catherine Dubourdieu4, and Olivier Renault11CEA, LETI, MINATEC Campus, GRENOBLE Cedex 9, France2STMicroelectronics, 850 rue Jean Monnet, Crolles, France3European Synchrotron Radiation Facility, Grenoble, France4LMGP, CNRS, Grenoble INP, Grenoble, France

TH-04, WITHDRAWN

TH-05, Charge-Based Capacitance Measurements Circuits for Interface with Atomic Force Microscope ProbesJoseph Kopanski, M. Yaqub Afridi, Chung Jeong, Michael Lorek, Timothy Kohler, and Curt. A. RichterSemiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA

TH-06, Vibrating Sample Magnetometry Study of High-Permeability Dielectrics on NanomagnetsPeng Li1, Gyorgy Csaba1, Michael Niemier2, X. Sharon Hu2, Joseph J. Nahas2, Wolfgang Porod1, and Gary H. Bernstein11Center for Nano Science and Technology, Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA2Department of Computer Science and Engineering, University of Notre Dame, Notre Dame, IN 46556, USA

TH-07, Pore Size Evaluation of Low-κ Thin Films by Using X-Ray Porosimetry
Yong-Qing Chang, Bo-Ching He,Hsin-Chia Ho, and Wei-En Fu
Center for Measurement Standards, Industrial Technology Research Institute 321, Sec.2, Kuangfu Rd., Hsinchu, 30011, Taiwan

TH-08, New Experiments and Applications Made Possible by a Low Temperature 4-Tip STM with UHV-SEM NavigationAndreas Bettac, Berndt Guenther, Juergen Koeble, Fred Henn, and Albrecht FeltzOmicron NanoTechnology GmbH, Limburger Str. 75, D-65232 Taunusstein, Germany

TH-09, Local Measurements of Graphene Electronics Using Gate Mapping Tunneling SpectroscopyJungseok Chae1,2, Yue Zhao1,2, Suyong Jung1,2,3, Andrea F. Young4, Cory R. Dean5,6, Lei Wang6, Yuanda Gao6, Kenji Watanabe7, Takashi Taniguchi7, James Hone6, Kenneth L. Shepard5, Phillip Kim4, Nikolai B. Zhitenev1, and Joseph A. Stroscio11Center for Nanoscale Science and Technology, National Institute of Standard and Technology2Maryland NanoCenter, University of Maryland3Korea Research Institute of Standards and Science4Department of Physics, Columbia University5Department of Electrical Engineering, Columbia University6Department of Mechanical Engineering, Columbia University7Advanced Materials Laboratory, National Institute for Materials Science

TH-10, Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to OxideRusen Yan1,2, Qin Zhang1,2, Oleg A. Kirillov1, Wei Li1,3, James Basham1, Alex Boosalis1,4, Xuelei Liang3, Debdeep Jena2, Curt A. Richter1, Alan Seabaugh2, David J. Gundlach1, Huili G. Xing2, and N. V. Nguyen11Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA2Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA3Key Laboratory for the Physics and Chemistry of Nano Devices, Peking University, Beijing, China4Department of Electrical Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA

TH-11, Direct Measurement of the Intrinsic Dirac Point of Graphene
Kun Xu^1,2, Caifu Zeng³, Qin Zhang^1,4, Rusen Yan^1,4, Peide Ye², Kang Wang³, Alan C. Seabaugh⁴, Huili Grace Xing⁴, John S. Suehle¹, Curt A. Richter¹, David J. Gundlach¹, and N. V. Nguyen^1

1National Institute of Standards and Technology, Gaithersburg, Maryland
²Purdue University, West Lafayette, IN
³University of California, Los Angeles, Los Angeles, CA
⁴University of Notre Dame, Notre Dame, IN

TH-12, Revelation of Pattern Formation in Single Ferromagnetic CoFeB Film by Using the Giant Spin Hall Spin Torque
Wanjun Jiang, Pramey Upadhyaya, Li-Te Chang, Kin L. Wong, Jing Zhao, Tianxiao Nie, Murong Lang, Robert N. Schwartz, and Kang L. Wang
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, California, USA, 90095

TH-13, Measure the Charge Storage Speed and Endurance of Redox-Active Molecules
Hao Zhu^1,2, Christina A. Hacker², Curt A. Richter², Hui Yuan^1,2, Haitao Li^1,2, Oleg Kirillov², Dimitris Ioannou¹, and Qiliang Li^1,2

1Dept. of Electrical and Computer Engineering, George Mason University, Fairfax, VA
²Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD

TH-14, The Statistic Characteristics of Switching Parameters for Ta₂O_5-X Based RRAM
Haitao Li^1,2, Curt A. Richter², Oleg Kirillov², Hao Zhu^1,2, Hui Yuan^1,2, Qiliang Li^1,2

1Dept. of Electrical and Computer Engineering, George Mason University, Fairfax, VA
²Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD

TH-15, Interactions Between Two Independently Contacted and Rotationally Aligned Graphene LayersChristopher Corbet, Kayoung Lee, Babak Fallahazad, Emanuel Tutuc, and Sanjay BanerjeeThe Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Building 160, Austin Texas, 78758

TH-16, FinFET Sidewall Roughness Measurement and Correlation to Device PerformanceA. F. Bello1, Aaron Cordes2, Abhijeet Paul1, Shogo Mochizuki3, Chun-Chen Yeh4, and Huiming Bu41Technology Research Group, GLOBALFOUNDRIES, 257 Fuller Rd., Suite 3100, Albany, NY2Sematech, 257 Fuller Rd., Suite 2100, Albany, NY3Renesas, 257 Fuller Rd., Suite 3100, Albany, NY4IBM Microelectronics, 257 Fuller Rd., Suite 3100, Albany, NY

TH-17, Optical Scatterometry for In-Die Sub-Nanometer Overlay MetrologyHenk-Jan H. Smilde1, Martin Jak1, Arie den Boef1, Mark van Schijndel1, Murat Bozkurt1, Andreas Fuchs1, Maurits van der Schaar1, Steffen Meyer1, Stephen Morgan1, Jon Wu1, Vincent Tsai1, Frida Liang1, Cathy Wang1, Kaustuve Bhattacharyya1, Guo-Tsai Huang2, Chih-Ming Ke2, and Kai-Hsiung Chen21ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands2TSMC Ltd, 8, Li-Hsin Rd. 6. Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C.

TH-18, CD-SAXS for 3D Dimensional Metrology on 32 nm Pitch Line Patterns
Daniel F. Sunday¹, Wen-li Wu¹, Scott List², and R. Joseph Kline^1

1Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD 20899
²Intel Corporation, Hillsboro, OR 97124

TH-19, On Sub-10 nm 3D CD-SEM MetrologyAndrás E. Vladár, John S. Villarrubia, Bin Ming, and Michael T. PostekNational Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899-8212, USA

TH-20, CD Metrology Gaps Analysis from the 22 nm Node OnwardsBenjamin BundaySEMATECH, 257 Fuller Rd, Albany NY, 12203 USA

TH-21, Fabrication and Characterization of Standards for Atomic Force Microscope Tip Width CalibrationRonald Dixson1, Craig McGray1, Boon Ping Ng2, Ndubuisi G. Orji1, and Jon Geist11NIST Semiconductor and Dimensional Metrology Division, 100 Bureau Drive, Gaithersburg, MD 208992Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075

TH-22, Shallow Probe: Non-Destructive Compositional Metrology for Films and StructuresMona P. Moret, Anna Meura, Anne-Sophie Robbes, and Michel SchuhmacherCAMECA, 29 quai des Grésillons, 92 622 Gennevilliers, France

TH-23, Device-Level Electrical Characterization Using Ferromagnetic Resonance of Magnetic MultilayersEric R. Evarts, Matthew R. Pufall, and William H. RippardMagnetics Group, Electromagnetics Division, NIST, 325 Broadway, Boulder, CO 80305