2017 FCMN Presentations

Invited Oral Presentations
Poster Presentations

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The Conference organizers would like to thank each of the presenters who have made their slides available! Additional talks and posters will be added as we obtain permission from the speakers/authors.

Invited Oral Presentations

Conference Opening    

Welcome and Introduction
David Seiler, NIST

Keynote Talks

Semiconductor Metrology: Past, Present, and the Future
Dan Hutcheson, VLSI Research

Beyond CMOS Technologies
Aaron Thean, VP, National University of Singapore

TCAD

Metrology Requirements and Challenges for Advanced FinFET Technology Based on TCAD Simulation
Peter Zeitzoff, GlobalFoundries

Microscopy

Field Mapping with nm-spatial Resolution in Semiconductor Specimens in a Transmission Electron Microscope
David Cooper, CEA LETI Grenoble, France

Quantitative Atom Probe Tomography of Complex Systems
Devin Giddings, TSMC

Opportunities and Challenges for Hybrid Characterization and Metrology for Emerging Technologies
Markus Kuhn, Intel

Hybrid Metrology and Machine Learning to Make a Virtual Fab from a Lab
Johann Foucher, Pollen Metrology    

Diagnostic Techniques

Fault Isolation in IoT Age - Turning Challenges into Chances
Christian Boit, Technische Universität Berlin

Automated Work Flow for Process Control and Defect Analysis
Ozan Ugurlu, FEI

Examination of Advanced Technologies in Characterization, Diagnostics, and Verification at Different Stages in the Manufacturing Lifecycle of Packaged IC Devices
Colin Ritchie and Stuart Neches, Advantest

Magnetics/Spintronics

Overview of Magnetics/Spintronics
Kang Wang, UCLA

Nano-Magnetic Metrologies
Tom Silva, NIST

Novel Magnetic Nanoprobes: Imaging of Magnetism, Current Flow, and MRI Signals with Nanometer Resolution
Christian Degen, ETH Zurich

Metrology for Patterning

Challenges in Nanotopography Measurements at Die Level
Carlos Beitia, CEA-Leti

Critical Dimension Small Angle X-ray Scattering for the Semiconductor Industry
Joe Kline, NIST

OCD Metrology for Advanced Lithography
Bernd Boderman, PTB, Berlin

Muller Matrix-based Scatterometry
Alain Diebold, CNSE, SUNY Polytechnic Institute

Interface and Gate Stack Metrology

Chemical and Electrical Profiling of NanoLaminate Gate Stacks on SiGe
Andy Kummel, UCSD

Interfacial Electronic Characterization of Oxides/Metals on High Mobility Semiconductors Using in-situ Synchrotron Radiation Photoemission and the Correlation with the Interfacial Electric Properties
Minghwei Hong, National Taiwan Univ.

Beyond CMOS Characterization and Metrology

Electron Optics in Graphene Heterostructures with Nanopatterning
Scott Dietrich, Columbia

Creating an on/off Berry Phase Switch in Circular Graphene p-n Junctions
Christopher Gutierrez, NIST

XPS, STM, LEIS, …. of 2D Materials – Graphene, H-BN, and TMD Materials
Robert Wallace, UT Dallas

7-10 NM Metrology and Defect Inspection

State of the Art e-Beam Inspection Technology
Jack Jau, HMI

Extending Optical Inspection to the VUV
Keith Wells, KLA-Tencor

Optical Inspection at 10 nm Node and Beyond: Perspectives and Challenges
Mehdi Vaezlravani, Applied Materials

Current and Future Critical Dimension Metrology Technology Perspectives for Sub-10nm Processes 
Mari Nozoe, Hitachi, Japan

2.5D/3D Packaging Metrology

Metrology and Characterization Challenges for Complex 2.5 D and 3 D Packaging
Bill Bottoms, Consultant

Novel Metrology Solution for Advanced Packaging Based on Multi-energy X-ray Microscopy and Tomography
Ehrenfried Zschech, Fraunhofer IKTS Dresden

Emerging Metrology

Future Needs of Characterization and Metrology for Silicon Qubits in Quantum Computing
Neil Zimmerman, NIST

Size Dependent Resistivity in Narrow Fins as Probed with Micro-FPP
Janusz Bogdanowicz, Imec

Reflective Small Angle Electron Scattering to Characterize Nanostructures
Wen-Li Wu, NIST

Individual Device Analysis Using Hybrid TEM-Scalpel SSRM Metrology
Umberto Celano, Imec

Super-resolution Single-Molecule Microscopy using Plasmonic Opti-Chip
Shubhra Gangopadhyay, University of Missouri / NSF

Poster Presentations

001, Direct Observation of Alloyed Contact Formation in Nanowire Cross-Section
Renjie Chen¹, Katherine L. Jungjohann², William M. Mook², John Nogan², and Shadi A. Dayeh^1,3,4
1Dept of Electrical and Computer Engineering, Univ. of CA San Diego, La Jolla, CA
²Sandia National Laboratories, Albuquerque, NM
³Materials Science and Engineering Program, Univ. of CA San Diego, La Jolla, CA
⁴Dept of NanoEngineering, Univ. of CA San Diego, La Jolla, CA

002, Contribution of Luminescence Techniques for the Characterization of Materials and Devices at the Nanoscale
C. Licitra¹, N. Rochat¹, N. Gambacorti¹, S. David², G. R. Muthinti³, F. Olivier¹, A. Faujour⁴, and A. Chabli^4 
1Univ. Grenoble Alpes \ CEA, LETI, MINATEC Campus, Grenoble, France
²Univ. Grenoble Alpes \ CNRS, LTM, Grenoble, France
³IBM Research, Albany, NY
⁴Univ. Grenoble Alpes, INES, F-73375 Le Bourget du Lac, France

003, Seeing the Invisible: Metrology for Extended Defects in Beyond-Silicon Semiconductor Device Structures
Andreas Schulze¹, Anna Prokhodtseva², Tomas Vystavel², David Gachet³, Jean Berney³, Roger Loo¹, Wilfried Vandervorst^1,4, and Matty Caymax^1
1Imec, Leuven, Belgium
²Mat. & Struct. Analysis, Thermo Fisher Scientific, Czech Republic
³Attolight AG, Lausanne, Switzerland
⁴KU Leuven, Dept. of Physics and Astronomy, Leuven, Belgium

004, High Brightness MetalJet X-Ray Technology for Semiconductor Process Metrology
J. Hållstedt, U. Lundström, E. Espes, B. A. M. Hansson, O. Hemberg, G. Johansson, M. Otendal, T. Tuohimaa, and P. Takman
Excillum AB, Torshamnsgatan 35, 164 40 Kista, Sweden

005, Nanoelectronics Dimensional Metrology: Understanding the Differences Between Secondary and Backscattered Electron Imaging
Michael T. Postek, András E. Vladár, and John S. Villarrubia 
National Institute of Standards and Technology (NIST), Gaithersburg, MD

006, High-Throughput X-ray CD Metrology
R. Loewen, M. Feser, R. Ruth, and M. Gifford 
Lyncean Technologies, Inc., Fremont, CA

007, Electrical Property Characterization of Vacuum-Channel Nanoelectronics Via Scanning Capacitance Microscopy
Jin Woo Han
NASA Ames Research Center, Moffett Field, CA

008, Assessing Scanning Electron Microscopy Stereophotogrammetry Algorithms with Virtual Test Samples
John S. Villarrubia, Vipin N. Tondare, and András E. Vladár
National Institute of Standards and Technology (NIST), Gaithersburg, MD

009, Development of a Nanometer Probe Helium Ion Microscope with Time of Flight Element Identification
Viacheslav Manichev ¹, Alexander Livernois¹, L. C Feldman¹, T. Gustafsson¹, D. Barbacci², and A. Schultz^2
1Rutgers University, Piscataway, NJ
²Ionwerks Inc., Houston, TX

010, Subsurface Nano-Imaging Using Torsional Scanning Probe Microscopy
Violeta Navarro, Maarten H. van Es, and Hamed Sadeghian
TNO, Stieltjesweg 1, 2628 CK Delft, The Netherlands

011, Engineering Ferroelectric Polymer Memories: Confounding Factors Which Obscure Polarization
Vasileia Georgiou^1,2, Dmitry Veksler¹, Jason P. Campbell¹, Dimitris E. Ioannou², and Kin P. Cheung^1
1National Institute of Standards and Technology (NIST), Gaithersburg, MD
²Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA

012, Nanoscale Chemical Imaging with Infrared Photo-Induced Force Microscopy
Sung Park, Derek Nowak, and Thomas Albrecht
Molecular Vista, Inc., San Jose, CA

013, ALPro System: An Electrical Profiling Tool for Ultra-Thin Film Characterization
Abhijeet Joshi and Bulent Basol
Active Layer Parametrics, Inc., Los Angeles, CA

014, Precision of Micro Hall Effect Measurements in Scribe Line Test Pads
Maria-Louise Witthøft¹, Frederik W. Østerberg¹, Janusz Bogdanowicz², Andreas Schulze², Wilfried Vandervorst^2,3, Henrik H. Henrichsen⁴, Peter F. Nielsen⁴, Ole Hansen¹ and Dirch H. Petersen^1
1Department of Micro- and Nanotechnology, Technical University of Denmark, Lyngby, Denmark
²IMEC, Leuven, Belgium
³Instituut voor Kern- en Stralingsfysika, Leuven, Belgium
⁴CAPRES A/S, Scion-DTU, Lyngby, Denmark

015, Coherent Extreme Ultraviolet Light Reveals the Elastic Properties of Ultrathin Films
Travis D. Frazer¹, Jorge N. Hernandez-Charpak¹, Joshua L. Knobloch¹, Begoña Abad Mayor¹, Kathleen M. Hoogeboom-Pot^1,2, Damiano Nardi^1,2, Qing Li¹, Marie Tripp², Sean W. King², Erik H. Anderson³, Weilun Chao³, Henry C. Kapteyn¹, and Margaret M. Murnane^1
1JILA and Department of Physics, University of Colorado, Boulder, CO
²Intel Corporation, Hillsboro, OR
³Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, CA

016, Thermoelectric Property of Silicon Nanowires Processed by Metal Assisted Dirctional Chemical Etching
David Rodriguez and Yong X. Gan
California State Polytechnic University, Pomona, CA

017, Time of Flight Backscattering Spectrometry and Secondary Ion Mass Spectrometry in a Helium Ion Microscope - Chemical Analysis on the nm Scale
N. Klingner1, R. Heller¹, G. Hlawacek¹, P. Gnauck², S. Facsko¹, and J. von Borany^1
1Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany
²Carl-Zeiss-Microscopy GmbH, D-73447 Oberkochen, Germany

018, Atom Probe: Opportunities for CMOS Characterization
T.J. Prosa, I. Martin, Y. Chen, K.P. Rice, D.A. Reinhard, and D.J. Larson
CAMECA Instruments, Inc. Madison, WI

019, ICS X-ray Source for 3D Nano-Structured Metrology
Bradley J Nordell, Sudeep Banerjee, Grigory Golovin, and Donald Umstadter
Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE

020, Monitoring Accuracy and Robustness in On-Product Diffraction-Based Overlay Metrology
Arie den Boef¹, Kaustuve Bhattacharyya¹, Marc Noot¹, Aiqin Jiang², and Martin Jak^1
1ASML Netherlands B.V., Veldhoven, The Netherlands
²ASML, Ballston Lake, NY

021, Assessing Quantitative Optical Imaging for Realizing In-Die Critical Dimension Metrology
Bryan M. Barnes, Mark-Alexander Henn, Hui Zhou, Martin Y. Sohn, and Richard M. Silver
National Institute of Standards and Technology (NIST), Gaithersburg, MD

022, Transmission and Reflection-Mode Imaging of Nanostructures with 13nm Illumination via Tabletop Ptychography CDI
Christina L. Porter¹, Michael Tanksalvala¹, Dennis F. Gardner¹, Michael Gerrity¹, Giulia F. Mancini¹, Xiaoshi Zhang³, Galen P. Miley², Elisabeth R. Shanblatt¹, Benjamin R. Galloway, Charles S. Bevis¹, Nara Noeur¹, Robert Karl Jr., Daniel A. Adams¹, Henry C. Kapteyn¹, and Margaret M. Murnane^1
1JILA, University of Colorado, Boulder, CO
²Department of Chemistry, Northwestern University, Evanston, IL
³KMLabs Inc., Boulder, CO

023, An FEL Source for CMOS Lithography and Characterization
Paul van der Heide, Obert Wood, and Erik Hosler
GLOBALFOUNDRIES, Malta, NY

024, Automated AFM for Small-Scale and Large-Scale Surface Profiling in CMP Applications
Ardavan Zandiatashbar¹, Byong Kim¹, Young-kook Yoo¹, Keibock Lee¹, Ahjin Jo², Ju Suk Lee², Sang-Joon Cho², and Sang-il Park^2
1Park Systems Inc., Santa Clara, CA
²Park Systems Corp., Suwon, Korea

025, Characterization of a Lab Based CD-SAXS Tool
W. D. Thompson¹, R. Joseph Kline², and Osman Sorkhabi^1
1Lam Research Corporation, Fremont, CA
²National Institute of Standards and Technology (NIST), Gaithersburg, MD

026, Quantum Noise Effects in e-Beam Lithography and Metrology
T. Verduin, S.R. Lokhorst, C.W. Hagen, and P. Kruit
Delft University of Technology, Dept. Imaging Physics, Lorentzweg 1, 2628CJ Delft, The Netherlands

027, High Resolution EBI for Pattern Fidelity Monitor
Fei Wang, Brian Lee, Kevin Liu, and Jack Jau
HMI, an ASML Company, San Jose, CA

028, In-line 3D AFM for Critical Dimension and Sidewall Roughness of Si Photonic Waveguide and Correlation with Its Propagation Loss
T.-G. Kim¹, P. Verheyen¹, P. De Heyn¹, T. Vandeweyer¹, A. Miller¹, M. Pantouvaki¹, J. Van Campenhout¹, A.-J. Jo², S.-J. Cho², and S.-I. Park^2
1Imec vzw., Leuven, Belgium
²Park Systems, Suwon, South Korea

029, Reference Materials to Enable Precise and Accurate Imaging with Electrical Scanning Probe Microscopes
J. J. Kopanski, L. You, J. Corona, and Y. S. Obeng
National Institute of Standards and Technology (NIST), Gaithersburg, MD

030, Ultra-thin ALD HfO2 Growth Mechanism Studied By Atomic Force Microscope (AFM)
Charles C. Wang, Steven Hung, Naomi Yoshida, Tatsuya E. Sato, and Yuri Uritsky
Applied Materials, Inc., Santa Clara, CA

031, Ferroelectricity in Atomic Layer Deposited Hf_1-xZr_xO₂ Nanoscale Films: Characterization By Synchrotron Grazing Incidence X-Ray Diffraction and Polarization Measurements
Sonal Dey¹, Kandabara Tapily², Steven Consiglio², Robert D. Clark², Cory S. Wajda², Gert J. Leusink², Arthur R. Woll³, Pankaj Sharma⁴, Suman Datta⁴, and Alain C. Diebold^1
1CNSE, SUNY Polytechnic Institute, Albany, NY
²TEL Technology Center, America, LLC, Albany, NY
³Cornell High Energy Synchrotron Source, Ithaca, NY
⁴Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN

032, Helium Ion Microscopy for Si Materials With Less Mechanical Damage
Shinichi Ogawa¹, Nobuaki Tarumi², Tomohiko Iijima¹, Yumiko Shimizu², and Yuji Otsuka^2
1Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) West 7A, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569 Japan
²Toray Research Center Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 Japan

033, Reference-Free In-Depth Characterization of Nanoscale Layer Systems Using a Combined Grazing Incidence X-Ray Fluorescence and X-Ray Reflectometry Approach
Philipp Hönicke¹, Blanka Detlefs², Janis Eilbracht¹, Yves Kayser¹, Uwe Mühle³, Beatrix Pollakowski¹, and Burkhard Beckhoff^1
1Physikalisch-Technische Bundesanstalt (PTB), Berlin, Germany
²CEA-LETI/ESRF, Grenoble, France
³Fraunhofer IKTS, Dresden, Germany

034, From Large Research Instruments to an Industrial Control: X-Ray Photoelectron Spectroscopy Characterizations of Advanced Technology Gate Stack
L. Fauquier^1,2,3, B. Pelissier^2,3, J. Avila⁴, M.-C. Asensio⁴, D. Le Cunff¹, D. Doloy¹, C. Beitia^2,5, and T. Baron^2,3
1STMicroelectronics, Crolles, France
²Univ. Grenoble Alpes, Grenoble, France
³CNRS, LTM, MINATEC Campus, Grenoble, France
⁴Synchrotron SOLEIL, Saint Aubin, Gif-sur-Yvette, France
⁵CEA, LETI, MINATEC Campus, Grenoble, France

035, XPS/ARXPS in Thin Film and Nanomaterial Process Control
Chris Moffitt¹, Simon Hutton², and Sarah Coultas^2
1Kratos Analytical, Inc., Chestnut Ridge, NY
²Kratos Analytical, Ltd., Wharfside, Manchester, UK

036, Evaluations of Graphene to Graphene Contacts
Jia-Bin Chen and Dung-Ching Perng
National Cheng Kung University, Tainan, Taiwan

037, Nanoscale Analysis of Conductance Switching Dynamics and Current Hysteresis in (GeTe)2/ Sb2Te3 Superlattice Films Using Scanning Probe Methods
Leonid Bolotov, Tetsuya Tada, Yuta Saito, Noriyuki Miyata, and Junji Tominaga
Nanoelectronics Research Institute, Nat. Inst. of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan

038, Thermal Cooling of High-Power Electronics Using SiO2 Nanoparticle Packings
Anil Yuksel¹, Eric J. Tervo², Baratunde A. Cola², Paul S. Ho¹, Michael Cullinan¹
Zhuomin M. Zhang², and Jayathi Murthy^3
1The University of Texas at Austin, Austin, TX
²Georgia Institute of Technology, Atlanta, GA
³University of Califormia, Los Angeles, CA

039, An Electromechanical Spectroscopy for Determining the Atomic-Configuration of Single-Molecule Devices
Joshua Hihath
Department of Electrical and Computer Engineering, Davis, CA

040, Pico-Second Laser and Broad Argon Beam Tools for Chaacterization of Advanced Packages and Devices
Y.Wang, C. Spence, S. Coyle, J. Hunt, and M. Hassel Shearer
Gatan Inc., Pleasanton, CA

041, Examination of Advanced Technologies in Characterization, Diagnostics, and Verification at Different Stages in the Manufacturing Lifecycle of Packaged IC Devices041.pdf
Colin Ritchie¹, Scott West¹, Stuart Neches¹, Eiji Kato², and Masaichi Hashimoto^2
1Advantest America, Inc., San Jose, CA
²Advantest Corporation, Matsubara, Kamiayashi, Aoba-ku, Sendai Japan

042, Characterization and Control of the Surface of the Topological Insulator Bi2Se3
Avery J. Green¹, Lee A. Walsh², Wesley Nolting¹, Carl A. Ventrice Jr.¹, Chris L. Hinkle², and Alain C. Diebold^1
1CNSE, SUNY Polytechnic Institute, Albany, NY
²Materials Science and Engineering, University of Texas at Dallas, Richardson, TX

043, Strain and Composition Monitoring in Various (Si)Ge Fin Structures Using In-Line HRXRD
Andreas Schulze¹, Roger Loo¹, Liesbeth Witters¹, Hans Mertens¹, Nadine Collaert¹, Naoto Horiguchi¹, Matthew Wormington², Paul Ryan³, Wilfried Vandervorst^1,4, and Matty Caymax^1
1Imec, Leuven, Belgium
²Bruker Semiconductor Division, Santa Barbara, CA
³Bruker Semiconductor Division, Durham, UK
⁴KU Leuven, Dept. of Physics and Astronomy, Leuven, Belgium

044, In-Line Stress/Contamination Metrology for Advanced Semiconductor Device Using Micro Raman and Photoluminescence Measurements
Jae Hyun Kim^1,2, Chang Whan Lee¹, Hyung Won Yoo¹, Byoung Ho Lee¹, and Seung Min Han^2
1SK hynix, Inc., Icheon-si, Gyeonggi-do, Korea
²Korea Advanced Institute of Science and Technology, Daejeon, Korea

045, Advanced Defect Classification By Optical Metrology
Jacques van der Donck, Esther Kramer, Peter van der Walle, Wouter Mulckhuyse, Jacqueline van Veldhoven, Loek Nijsten, Felipe Bernal Arango, Helma Spruit, and Diederik Maas
TNO Stieltjesweg 1, 2628 CK, Delft, The Netherlands

046, Automatic Detection of Dislocations in Strained SiGe With HCl Etch and Brightfield Inspection
Ralf Buengener and Jody Fronheiser
TD Research, GLOBALFOUNDRIES USA, Albany, NY

047, Inline X-ray Metrology of Epitaxial Thin Film for Gate-All-Around Structures
B. Mendoza¹, P. Gin², K.M. Matney², M. Wormington², J. Wall³, P. Ryan³, R. Chao¹, and J. Gaudiello^1
1IBM STR Albany, Albany, NY
²Bruker Semi Division, Santa Barbara, CA
³Bruker JV UK Ltd., Durham, UK

048, Nano-Particle Detection, Identification and Concentration Determination in Liquids for sub-10 nm Technology Nodes
Basil G. Eleftheriades¹, Steve A. Rutledge¹, Manuchehr Ebrahimi¹, Emily E. Storey¹, Marie Tripp², Bhagrava Ravoori², Tuyen K. Tran², and Amr S. Helmy^1
1Department of Electrical and Computer Engineering, University of Toronto, Toronto M5S 3G4, Canada
²Intel Corporation, Hillsboro, OR

049, Image Processing Software Assisted Quantitative Analysis of Various Digital Images in Process Monitoring, Process Control and Material Characterization
Woo Sik Yoo, Toshikazu Ishigaki, and Kitaek Kang
WaferMasters, Inc., San Jose, CA

050, Optical Critical Dimension Metrology for the 7 nm Node and Beyond Using a Near-Field Metalens
Jinlong Zhu^1,2, Yating Shi², Shiyuan Liu², and Lynford L. Goddard^1
1Photonic Systems Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL
²State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan, China

051, Enhanced Defect Detection in Patterned Wafers Using a Plasmonic Waveguide Metalens Array
Jinlong Zhu, Sanyogita Purandare, and Lynford L. Goddard
Photonic Systems Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL

052, Combining Nano-Scale Inert-Gas Ion Microscopy and Secondary Ion Mass Spectrometry
Sybren Sijbrandij¹, John Notte¹, David Dowsett², Jean-Nicolas Audinot², and Tom Wirtz^2
1Carl Zeiss Microscopy, LLC, Ion Microscopy Innovation Center, Peabody, MA
²Advanced Instrumentation for Ion Nano-Analytics (AINA), MRT Department, Luxembourg Institute of Science and Technology (LIST), Belvaux, Luxembourg

053, Analyzing Post-CMP Surface Topography from White Light Interference Microscopy
A.F. Bello, Jusang Lee, Shinichiro Kakita, and Nicholas Pieniazek
Advanced Module Engineering, GLOBALFOUNDRIES, Malta, NY

054, Characterization of Doping Distribution in Fin Field Effect Transistor (FinFET) Structures Representative for 14nm CMOS Technology and Beyond
M.J.P. Hopstaken¹, M. Saccomanno¹, M. Ebrish², and O. Gluschenkov^2
1IBM T.J. Watson Research Center, Yorktown Heights, NY
²IBM Research Albany Nanotech Center, Albany, NY

055, Optical Properties of Pseudomorphic Ge1-x-ySixSny on Ge
Nalin S. Fernando¹, Ryan Hickey², John Hart², Ramsey Hazbun², Dainan Zhang², James Kolodzey², and Stefan Zollner^1
1Department of Physics, New Mexico State University, Las Cruces, NM
²Department of Electrical and Computer Engineering, University of Delaware, Newark DE

056, In-situ TEM Observation of Nickelide Contact Formation in InGaAs Nanowire Channels
Renjie Chen¹ and Shadi A. Dayeh^1,2,3
1Dept of Electrical and Computer Engineering, Univ. of CA San Diego, La Jolla, CA
²Materials Science and Engineering Program, University of CA San Diego, La Jolla, CA
³Dept of NanoEngineering, Univ. of CA San Diego, La Jolla, CA

057, High Precision Optical Characterization of Carrier Diffusion Length
Will Chism¹ and Michael Current^2
1Xitronix Corporation, Austin TX
²Current Scientific, San Jose, CA

058, Crack Evolution In Cu/Low-K Stacks And Crack Stop Evaluation Using In-Situ Micro-DCB In A Nano-XCT Tool
Kristina Kutukova, Jürgen Gluch, Yvonne Standke, and Ehrenfried Zschech
Fraunhofer Institute for Ceramic Technologies and Systems, Maria-Reiche-Str. 2, 01109 Dresden, Germany

059, New Frequency Domain Fiber Optic Interferometry for Advanced Wafer, Micro-  and Nanostructure Metrology
Wojtek J. Walecki, Alexander Pravdivtsev, Jae Ryu, Nikos D. Jaeger, Yuen Lim, and Ann Koo
Frontier Semiconductor, San Jose CA