Witczak, S.
, Schrimpf, R.
, Galloway, K.
, Fleetwood, D.
, Pease, R.
, Puhl, J.
, Schmidt, D.
, Combs, W.
and Suehle, J.
(1996),
Accelerated Tests for Simulating Low Dose Rate Gain Degradation of Lateral and Substrate PNP Bipolar Junction Transistors, IEEE Transactions on Nuclear Science
(Accessed January 13, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Accelerated Tests for Simulating Low Dose Rate Gain Degradation of Lateral and Substrate PNP Bipolar Junction Transistors
Published
Author(s)
S C. Witczak, R D. Schrimpf, K F. Galloway, D M. Fleetwood, R L. Pease, , D M. Schmidt, W R. Combs,
Citation
IEEE Transactions on Nuclear Science
Volume
43
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 31, 1995, Updated October 12, 2021