Comparison of SEM and HRTEM CD-Measurements Extracted from Monocrystalline Tes-Structures Having Feature Linewidths from 40 nm to 240 nm

Published

April 18, 2005

Author(s)

Michael W. Cresswell, Brandon Park, Richard A. Allen, William F. Guthrie, Ronald G. Dixson, Wei Tan, Christine E. Murabito

Abstract

CD measurements have been extracted from SEM and HRTEM images of the same set of monocrystalline silicon features having linewidths between 40 and 200 nm. The silicon features are incorporated into a new test structure which has been designed to facilitate this type of CD-metrology study. The purpose of the work was to evaluate the calibration statistics of SEM transfer-metrology when HRTEM is used as primary metrology.

Conference Dates

April 4-7, 2005

Conference Location

Leuven, 1, BE

Conference Title

ICMTS 2005 International Conference on Microelectronic Test Structures

Pub Type

Conferences

Keywords

"CD metrology" "linewidth" "VLSI" "calibraiton statistics" "SEM"

Citation

Cresswell, M. , Park, B. , Allen, R. , Guthrie, W. , Dixson, R. , Tan, W. and Murabito, C. (2005), Comparison of SEM and HRTEM CD-Measurements Extracted from Monocrystalline Tes-Structures Having Feature Linewidths from 40 nm to 240 nm, ICMTS 2005 International Conference on Microelectronic Test Structures, Leuven, 1, BE (Accessed December 26, 2024)