Jones, K.
, Moller, K.
, Puga-Lambers, M.
, Law, M.
, Simons, D.
, Chi, P.
, Freer, B.
, Bernstein, J.
, Rubin, L.
, Simonton, R.
, Elliman, R.
, Petravic, M.
and Kringhoj, P.
(1997),
The Effect of End of Range Loops on Transient Enhanced Diffusion in Si, Proceedings of the 11th International Conference Ion Implantation Technology, Austin, TX
(Accessed July 17, 2024)
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The Effect of End of Range Loops on Transient Enhanced Diffusion in Si
Published
Author(s)
K. S. Jones, K. Moller, M. Puga-Lambers, M. Law, , , B. Freer, J. Bernstein, L. Rubin, R. Simonton, R. G. Elliman, M. Petravic, P. S. Kringhoj
Proceedings Title
Proceedings of the 11th International Conference Ion Implantation Technology
Conference Dates
June 16-21, 1996
Conference Location
Austin, TX
Pub Type
Conferences
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created April 1, 1997, Updated February 19, 2017