Energy Distribution of Interface Traps in High-K Gated MOSFETs

Published

June 1, 2003

Author(s)

Jin-Ping Han, Eric M. Vogel, Evgeni Gusev, C. D'Emic, Curt A. Richter, Da-Wei Heh, John S. Suehle

Abstract

We use variable rise/fall-time charge pumping (CP) to determine the energy distribution of interface trap density (Dit) and capture cross-section of electrons/holes in high-k HfO2 gated nMOSFETs. Our results have revealed that the Dit is much higher in the upper half of the bandgap than that in the lower half of the bandgap. These results are consistent with the observation that n-channel mobilities are more severely degraded than p-channel mobilities when compared to conventional MOSFET's with SiO2 as the gate dielectric. The results were verified by capacitance-voltage (C-V) and ac conductance techniques.

Proceedings Title

Tech. Dig., VLSI Technology

Conference Dates

June 10-14, 2003

Conference Location

Kyoto, 1, JA

Conference Title

2003 Symposia on VLSI Technology and Circuits

Pub Type

Conferences

Keywords

C-V, ac-conductance, capture cross-section, energy distribution, high k gated MOSFETs, interface trap density, charge pumping

Citation

Han, J. , Vogel, E. , Gusev, E. , D'Emic, C. , Richter, C. , Heh, D. and Suehle, J. (2003), Energy Distribution of Interface Traps in High-K Gated MOSFETs, Tech. Dig., VLSI Technology, Kyoto, 1, JA (Accessed July 18, 2024)