Extended X-Ray Absorption Fine-Structure Measurement of Bond-Length Strain in Epitaxial Gd203 on GaAs (001)

Published

May 1, 2000

Author(s)

E J. Nelson, Joseph C. Woicik, M Hong, JP Mannaerts

Abstract

Extended x-ray absorption fine structure (EXAFS) has been used to measure the bond length in a 23 epitaxial Gd₂O₃ film grown on GaAs(001). The Gd-O bond length is determined to be 2.390 0.013 or a bond-length strain of +2.7 0.6 % relative to the bond length in bulk Gd₂O₃ powder. Using a simple model for the strained film that matches the [001] and [-110] axes of Gd2O3 with the [110] and [1-10] axes of the GaAs(001) surface, the measured bond-strength increase of the film determined by EXAFS agrees well with the perpendicular lattice distortion of the film determined by diffraction. The absence of a polarization dependence of the EXAFS suggests similar lattice strains along the in-surface [-110] and out-of-surface normal [110] directions of the Gd₂O₃ film.

Citation

Applied Physics Letters

Volume

76

Issue

No. 18

Pub Type

Journals

Keywords

bond-length, extended x-ray absorption fine structure, metal-oxide-semiconductor

Citation

Nelson, E. , Woicik, J. , Hong, M. and Mannaerts, J. (2000), Extended X-Ray Absorption Fine-Structure Measurement of Bond-Length Strain in Epitaxial Gd₂0₃ on GaAs (001), Applied Physics Letters (Accessed July 17, 2024)