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PUBLICATIONS

On the Impact of Hydrogen Infiltration into Amorphous Oxide Transistor Performance during Forming Gas Annealing (FGA) and its Mitigation

Published

Author(s)

Yu-Hsin Kuo, Dylan J. Matthews, Shinichiro N. Muramoto, TaeYoung Song, Chengyang Zhang, Xianduo Zhao, Md S. Rahman, Sanghyun Kang, Andres S. Aguirre, Seung M. Lee, Daewon Ha, Sourav Dutta, Theodore Moise, Jayakanth Ravichandran, Shimeng Yu, Alexander Grutter, Suman Datta, Tania Roy, Asif I. Khan

Abstract

We present, for the first time, a CMOS-compatible and highly effective hydrogen barrier layer composed of thin Al2O3 and HfO2 films, integrated into ALD-based 4% W-doped In2O3-based amorphous oxide semiconductor (AOS) transistors. Following 4000 C FGA (4% H2 + 96% N2) for 60 min, these devices exhibit exceptional VTH stability under both PBTI and NBTI conditions.
Proceedings Title
2025 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Conference Dates
June 8-August 12, 2025
Conference Location
Kyoto, JP
Conference Title
2025 IEEE Symposium on VLSI Technology and Circuits
Pub Type
Conferences

Keywords

hydrogen, film, SIMS, oxide
Materials

Citation

Kuo, Y. , Matthews, D. , Muramoto, S. , Song, T. , Zhang, C. , Zhao, X. , Rahman, M. , Kang, S. , Aguirre, A. , Lee, S. , Ha, D. , Dutta, S. , Moise, T. , Ravichandran, J. , Yu, S. , Grutter, A. , Datta, S. , Roy, T. and Khan, A. (2025), On the Impact of Hydrogen Infiltration into Amorphous Oxide Transistor Performance during Forming Gas Annealing (FGA) and its Mitigation, 2025 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, JP (Accessed April 2, 2025)

Issues

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Created March 18, 2025, Updated March 27, 2025