Gaitan, M.
, Mayergoyz, I.
and Korman, C.
(1990),
Investigation of the Threshold Voltage of MOSFETs with Position- and Potential- Dependent Interface Trap Distributions Using a Fixed-Point Iteration Method, IEEE Transactions on Electron Devices
(Accessed February 10, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Investigation of the Threshold Voltage of MOSFETs with Position- and Potential- Dependent Interface Trap Distributions Using a Fixed-Point Iteration Method
Published
Author(s)
, I. D. Mayergoyz, C. E. Korman
Citation
IEEE Transactions on Electron Devices
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created April 29, 1990, Updated October 12, 2021