Ridzel, O.
, Yamane, W.
, Mansaray, I.
and Villarrubia, J.
(2023),
Model Validation for Scanning Electron Microscopy, Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, San Jose, CA, US, [online], https://doi.org/10.1117/12.2661103, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=936398
(Accessed November 21, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Model Validation for Scanning Electron Microscopy
Published
Author(s)
, , ,
Abstract
We are beginning projects to validate the physics models used for interpretation of electron microscopy images. In one, we will measure electron yields and energy spectra from cleaned well-characterized samples subjected to electron bombardment inside of a spherical retarding field analyzer in ultra-high vacuum. In another, we will measure the same features, lithographically patterned on free-standing Si membranes, with measurement techniques that differ in their interaction physics. A modeling project will compare measurement results with simulations using existing and new models. Good models should predict the observed yields and produce agreement among measurement techniques.Proceedings Title
Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII
Conference Dates
February 26-March 2, 2023
Conference Location
San Jose, CA, US
Conference Title
SPIE Advanced Lithography + Patterning
Pub Type
Conferences
Download Paper
Keywords
critical dimension, electron microscopy, electron transport modeling, nanometer-scale dimensional metrology, secondary electron yield measurement, SEM, STEM
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created April 27, 2023, Updated June 26, 2023