Optical volumetric inspection of sub-20 nm patterned defects with wafer noise

Published

April 2, 2014

Author(s)

Bryan M. Barnes, Francois R. Goasmat, Martin Y. Sohn, Hui Zhou, Richard M. Silver, Andras Vladar, Abraham Arceo

Abstract

We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D collected images into 3-D volumes of intensity information and also permits the use of multi-dimensional processing and thresholding techniques to enhance defect detectability. In this paper, the effects of wafer noise upon detectability using volumetric processing are assessed with both simulations and experiments using the SEMATECH 9 nm node intentional defect array. The potential extensibility and industrial application of this technique are evaluated.

Proceedings Title

Proceedings of the SPIE

Volume

9050

Conference Dates

February 23-27, 2014

Conference Location

San Jose, CA

Conference Title

Metrology, Inspection, and Process Control for Microlithography

Pub Type

Conferences

Download Paper

https://doi.org/10.1117/12.2048231

Keywords

wafer noise, defect inspection, volumetric processing, defect metrology, three-dimensional image processing

Citation

Barnes, B. , Goasmat, F. , Sohn, M. , Zhou, H. , Silver, R. , Vladar, A. and Arceo, A. (2014), Optical volumetric inspection of sub-20 nm patterned defects with wafer noise, Proceedings of the SPIE, San Jose, CA, [online], https://doi.org/10.1117/12.2048231 (Accessed December 26, 2024)