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Displaying 301 - 325 of 655

RFID Devices and Systems in Homeland Security Applications

July 1, 2007
Author(s)
Kate Remley, Jeffrey R. Guerrieri, Dylan Williams, David R. Novotny, Anthony B. Kos, Nelson Bryner, Nader Moayeri, Michael Souryal, Kang Lee, Steven Fick
This article reports on activities being carried out by the National Institute of Standards and Technology to ensure secure, reliable use of Radio-Frequency Identification (RFID) technology in homeland security and public safety applications. These

Dielectric polarization evolution equations and relaxation times

May 25, 2007
Author(s)
James R. Baker-Jarvis, Billy F. Riddle, Michael D. Janezic
In this paper we develop a model that can describe broadband dielectric response, and includes frequency-dependent loss and the effects of the local electric field. The model is based on a correlation-function approach that we previously developed using

On-Wafer Measurement of Transistor Noise Parameters at NIST

April 1, 2007
Author(s)
James P. Randa, Dave K. Walker
NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. We describe the measurement method and the uncertainty analysis and present results of measurements on a very poorly matched transistor.

Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices

February 25, 2007
Author(s)
Tam H. Duong, David Berning, Allen R. Hefner Jr., Keyue M. Smedley
This paper presents test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to operate a single power switch and a single

TEM Horn Antenna Design Principles

January 23, 2007
Author(s)
Chriss A. Grosvenor, Robert T. Johnk, David R. Novotny, Nino Canales, Benjamin Davis, Jason Veneman
The National Institute of Standards and Technology has developed several ultra-wideband, TEM Horn antennas with phase linearity, short impulse duration, and a near constant antenna factor. These are time-domain antennas used to measure impulsive fields

Complex permittivity measurements of planar building materials using a UWB free-field antenna measurement system

January 1, 2007
Author(s)
Ben N. Davis, Chriss A. Grosvenor, Robert T. Johnk, David R. Novotny, James R. Baker-Jarvis, Michael D. Janezic
Building materials are often incorporated into complex, multi-layer macrostructures that are simply not amenable to measurements using coax or waveguide sample holders. In response to this, an ultra-wideband free-field measurement system has been developed

Strain-Induced Grain Growth during Rapid Thermal Cycling of Aluminum Interconnects

January 1, 2007
Author(s)
Robert Keller, Roy H. Geiss, Nicholas Barbosa, Andrew Slifka, David T. Read
We demonstrate by use of automated electron backscatter diffraction (EBSD) the rapid growth of grains in non-passivated, sputtered Al-1Si interconnects during 200 Hz thermal cycling induced by alternating electric current. Mean grain diameters were

Dynamic Lorentz Microscopy of Micromagnetic Structure in Magnetic Tunnel Junctions

November 20, 2006
Author(s)
Justin Shaw, R.H. Geiss, Stephen E. Russek
Lorentz microscopy was used to study the micromagnetic structure and magnetization reversal in magnetic tunnel junctions (MTJs) fabricated with different processing conditions including a preoxidation process. The authors find that the free layer in a MTJ

Modeling MEMS Microhotplate Structures With SystemC

October 25, 2006
Author(s)
Ankush Varma, Muhammad Afridi, Akin Akturk, Paul Klein, Allen R. Hefner Jr., Bruce Jacob
Designers of SoCs with non-digital components, such as analog or MEMS devices, can currently use highlevel system design languages, such as SystemC, to model only the digital parts of a system. This is a significant limitation, since it makes key system

Single Photon Detector Comparison in a Quantum Key Distribution Link Testbed

October 25, 2006
Author(s)
Jonathan L. Habif, David S. Pearson, Robert Hadfield, Robert E. Schwall, Sae Woo Nam, Aaron J. Miller
We provide a direct comparison between the InGaAs avalanche photodiode (APD) and the NbN superconducting single photon detector (SSPD) for applications in fiber-based quantum cryptography. The quantum efficiency and dark count rate were measured for each

Generalized Test Bed for High-Voltage, High-Power SiC Device Characterization

October 1, 2006
Author(s)
David W. Berning, Allen R. Hefner Jr., J J. Rodriguez, Colleen E. Hood, Angel Rivera
A generalized 25 kV test bed developed to characterize high-voltage, high-power SiC devices is described. The test bed features containment of all high voltage circuits and the device under test (DUT) within a clear plastic interlocked safety box. A fast

Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device

October 1, 2006
Author(s)
Allen R. Hefner Jr., Ryu Sei-Hyung, Hull Brett, David W. Berning, Colleen E. Hood, Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez, Tam H. Duong, Adwoa Akuffo, Madelaine H. Hernandez
The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power

On-Wafer Noise-Parameter Measurements at NIST

July 14, 2006
Author(s)
James P. Randa, Dave K. Walker
NIST has developed the capability to measure noise parameters on a wafer int he 1-12.4 GHz range. In this paper we briefly describe the measurement methods and the uncertainty analysis and present results of measurements on a very poorly matched transistor

Terahertz radiometer design for traceable noise-temperature measurements

July 14, 2006
Author(s)
Eyal Gerecht, Dazhen Gu, James P. Randa, Dave K. Walker, Robert L. Billinger
We report on design of a radiometer for traceable noise-temperature measurements at terahertz frequencies, including noise measurements on cryogenic IF components, development and test of quasi-optical adapter technology, development of black body

Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices

July 1, 2006
Author(s)
Jose M. Ortiz-Rodriguez, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, S. Olcum
Silicon carbide (SiC) power devices have begun to emerge recently with a performance that is superior to that of silicon power devices. Therefore, the push to higher power and higher voltage applications also comes with it. This work addresses the need for
Displaying 301 - 325 of 655