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Displaying 301 - 325 of 718

Metrology Needs for 2.5D/3D Interconnect

June 20, 2014
Author(s)
Victor H. Vartanian, Richard A. Allen, Klaus Humler, Steve Olsen, Brian Sapp, Larry Smith
This chapter will focus on the metrology steps to support 2.5D and 3D reference flows employing via-mid copper through-silicon via (TSV) processing, wafer thinning, and backside processing using a handle wafer and chip-to-chip bonding. Reference flows that

Defect and Microstructural Evolution in Thermally Cycled Cu Through-Silicon Vias

June 14, 2014
Author(s)
Chukwudi A. Okoro, James Marro, Yaw S. Obeng, Kathleen Richardson
In this study, the effect of thermal cycling on defect generation, microstructure, and the RF signal integrity of blind Cu through-silicon via (TSV) were investigated. Three different thermal cycling profiles were used; each differentiated by their peak

Energy Control Paradigm for Compliance-Free Reliable Operation of RRAM

June 5, 2014
Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Jihong Kim, Jason P. Campbell, Kin P. Cheung, Shweta Deora, G. Bersuker, Helmut Baumgart
We demonstrate reliable RRAM operation by controlling the forming energy via short voltage pulses (picosecond range) which eliminates the need for a current compliance element. We further show that the dissipated energy during forming and SET/RESET

Metrology for 3D Integration

May 13, 2014
Author(s)
Richard A. Allen, Victor H. Vartanian, David T. Read, Winthrop A. Baylies
Three-dimensional stacked integrated circuit (3DS-IC) fabrication requires complex technologies such as high-aspect ratio through- silicon vias (TSVs), wafer thinning, thin wafer handling and processing, and bonding of thin wafers with complex patterned

Scanning Probe Microscopes for Subsurface Imaging

May 11, 2014
Author(s)
Joseph J. Kopanski, Lin You, Jungjoon Ahn, Emily Hitz, Yaw S. Obeng
Scanning probe microscopes (SPMs) have some ability to image sub-surface structures. This paper describes the theoretical and practical basis for imaging metal lines buried beneath insulating layers and for imaging insulating regions or voids within metal

Time-domain stabilization of carrier-envelope phase in femtosecond light pulses

May 7, 2014
Author(s)
Young-Jin Kim, Ian R. Coddington, William C. Swann, Nathan R. Newbury, Joohyung Lee, Seungchul Kim, Seung-Woo Kim
We report a time-domain method of stabilizing the carrier-envelope phase (CEP) of femtosecond pulses. Temporal variations of the pulse envelope and the carrier electric-field phase were separately detected with the aid of intensity cross-correlation and

Accurate RRAM Transient Currents during Forming

April 30, 2014
Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Jason P. Campbell, Jihong Kim, Canute I. Vaz, Kin P. Cheung, Helmut Baumgart
Current overshoot during forming has been shown to be a serious issue. Recently the current overshoot duration has been shown to be an important factor impacting device performance. Short duration overshoot in the range of ns yield better performance. But

Optimizing Hybrid Metrology through a Consistent Multi-Tool Parameter Set and Uncertainty Model

April 14, 2014
Author(s)
Richard M. Silver, Bryan Barnes, Nien F. Zhang, Hui Zhou, Andras Vladar, John S. Villarrubia, Regis J. Kline, Daniel Sunday, Alok Vaid
There has been significant interest in hybrid metrology as a novel method for reducing overall measurement uncertainty and optimizing measurement throughput (speed) through rigorous combinations of two or more different measurement techniques into a single

Terahertz Active and Passive Imaging

April 11, 2014
Author(s)
Erich N. Grossman, Joshua A. Gordon, David R. Novotny, Richard A. Chamberlin
We describe the results of bistatic scattering measurements covering 325-650 GHz on a series of wellcharacterized random rough test surfaces. These have implications for active THz imagers that use coherent sources for illumination. The mean scattered

10 nm Three-Dimensional CD-SEM Metrology

April 10, 2014
Author(s)
Andras Vladar, John S. Villarrubia, Bin Ming, Regis J. Kline, Jasmeet Chawla, Scott List, Michael T. Postek
The shape and dimensions of a challenging pattern have been measured using a model-based library scanning electron microscope (MBL SEM) technique. The sample consisted of a 4-line repeating pattern. Lines were narrow (10 nm), asymmetric (different edge

Metrology Needs for TSV Fabrication

March 4, 2014
Author(s)
Victor H. Vartanian, Richard A. Allen, Larry Smith, Klaus Hummler, Steve Olson, Brian Sapp
This paper focuses on the metrology needs and challenges of through silicon via (TSV) fabrication, consisting of TSV etch, liner, barrier, and seed (L/B/S) depositions, copper plating, and copper CMP. These TSVs, with typical dimensions within a factor of

Constant Shape Factor Frequency Modulated Charge Pumping (FMCP)

March 3, 2014
Author(s)
Jason T. Ryan, Jason P. Campbell, Jibin Zou, Kin P. Cheung, Richard Southwick, Anthony Oates, Rue Huang
Abstract— We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a constant

Detection of 3D Interconnect Bonding Voids by IR Microscopy

February 20, 2014
Author(s)
Jonny H?glund, Zoltan Kiss, Gyorgy Nadudvari , Zsolt Kovacs, Szabolcs Velkei, Moore Chris, Victor H. Vartanian, Richard A. Allen
There are a number of factors driving 3D integration including reduced power consumption, RC delay, and form factor as well as increased bandwidth. However, before these advantages can be realized, various technical and cost hurdles must be overcome. One

In situ temperature measurements for selective epitaxy of GaN nanowires

February 17, 2014
Author(s)
Kristine A. Bertness, Matthew D. Brubaker, Todd E. Harvey, Shannon M. Duff, Aric W. Sanders, Norman A. Sanford
We demonstrate with spatially resolved, in situ temperature measurements and ex situ reflectance measurements that differences in appearance for masked and unmasked surfaces on patterned growth substrates arise from wavelength-dependent emissivity

Measuring order in regioregular poly(3-hexylthiophene) with solid-state 13C CPMAS NMR

January 10, 2014
Author(s)
Ryan C. Nieuwendaal, Chad R. Snyder, Dean M. DeLongchamp
We report on details of molecular packing in high molar mass poly(3-hexylthiophene) (P3HT) by solid-state 13C {1H} cross-polarization magic angle spinning (CPMAS) NMR measurements. The degree of polymer order was estimated for two films of varied drying

Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001)

January 8, 2014
Author(s)
Christopher W. Petz, Dongyue Yang, Alline Myers, Jeremey Levy, Jerrold Floro
This work examines Si overgrowth to encapsulate 3C-SiC quantum dot arrays epitaxially grown on Si substrates. Using transmission electron microscopy we show how the crystalline quality of the Si cap depends on the growth conditions. Overgrowth at 300ºC

Tunable electrical conductivity in metal-organic framework thin film devices

January 3, 2014
Author(s)
Albert A. Talin, Andrea Centrone, Alexandra C. Ford, Michael E. Foster, Vitalie Stavila, Paul M. Haney, Robert A. Kinney, Veronika Szalai, Farid El Gabaly, Heayoung Yoon, Francois Leonard, Mark Allendorf
We report a strategy for realizing tunable electrical conductivity in MOFs in which the nanopores are infiltrated with redox-active, conjugated guest molecules. This approach is demonstrated using thin-film devices of the MOF Cu3(BTC)2 (also known as HKUST

Atomic Scale Defects Associated with the Negative Bias Temperature Instability

January 1, 2014
Author(s)
Jason P. Campbell, P. M. Lenahan
We utilize magnetic resonance measurements to identify the fundamental atomic-scale defect structures involved in the negative bias temperature instability. In gate stacks composed of pure silicon dioxide, we find a degradation mechanism directly involving
Displaying 301 - 325 of 718