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Displaying 401 - 425 of 655

Noise Characterization of Multiport Amplifiers

October 1, 2001
Author(s)
James P. Randa
I address the issue of the definition and measurement of noise figure and parameters to characterize multiport devices, particularly differential amplifiers. A parameterization in terms of the noise matrix appears to be the most practical. the noise figure

Meander Delay Line Challenge Problem: A Comparison Using FDTD, FEM and MOM Techniques

August 13, 2001
Author(s)
Alpesh Bhobe, Christopher L. Holloway, Melinda Piket-May
Full wave finite-difference time-domain (FDTD) and a simplified 1D- finite-difference time-domain technique using the multi-conductor transmission line equations are applied to a delay line to determine its propagation characteristics. The output volatge

High Temperature Characteristics of 5kV, 20 A 4H-SiC PiN Rectifiers

June 7, 2001
Author(s)
Ranbir Singh, Allen R. Hefner Jr., David W. Berning, M. Palmer
This paper reports in detail, the design, a manufactuable fabrication process, and high temperature characteristics of a 4H-SiC rectifier with a 5 kV, 20 A rating. A highly doped p-type epitaxial Anode layer and junction termination extension (JTE) were

Use of the Oscillation Based Built-in Self-test Method for Smart Sensor Devices

May 7, 2001
Author(s)
Angela Hodge, R. Newcomb, Allen R. Hefner Jr.
An oscillation-based built in self-test (BIST) method is presented for functional testing of mixed signal devices. An integral component of this method of on-chip testing involves transforming an oscillating analog signal into a digital clock-like signal

A High-Speed Thermal Imaging System for Semiconductor Device Analysis

April 1, 2001
Author(s)
Allen R. Hefner Jr., David W. Berning, David L. Blackburn, Christophe C. Chapuy, Sebastien Bouche
A new high-speed transient thermal imaging system is presented that provides the capability to measure the transient temperature distributions on the surface of a silicon chip with 1 υs time, and 15 υm spatial resolution. The system uses virtual instrument

IGBT Model Validation for Soft-Switching Applications

March 31, 2001
Author(s)
David W. Berning, Allen R. Hefner Jr.
Techniques are described for validating the performance of Insulated-Gate Bipolar Transistor (IGBT) circuit simulator models for soft-switching circuit conditions. The circuits used for the validation include a soft-switched boost converter similar to that

SiC Power Diodes Provide Breakthrough Performance for a Wide Range of Applications

March 1, 2001
Author(s)
Allen R. Hefner Jr., Ranbir Singh, Jih-Sheng Lai, David W. Berning, Sebastien Bouche, Christophe C. Chapuy
The electrical performance of Silicon Carbide (SiC) diodes are evaluated and compared to commercially available Silicon (Si) diodes in the voltage range from 600 V through 5000 V. The comparisons include the on-state characteristics, the reverse recovery

Exploring Site Quality Above 1 GHz Using Double Ridged Horns

February 1, 2001
Author(s)
Dennis G. Camell, Robert T. Johnk, K. R. Hall
This is a summary of recent exploratory efforts conducted by the American National Standards Institute (ANSI) Accredited Standards Committee C63, Sub-Committee 1,working group 1-13.2 on site requirements for radiated measurements above 1GHz. The main

Measuring Antennas Above 1 GHz

February 1, 2001
Author(s)
Michael Windler, Dennis G. Camell
The techniques for EMC measurements used with antennas above 1 GHz have been gleaned from methods used at lower frequencies. The assumptions made in applying these techniques have not been completely validated. This analysis will compare antennas for use

A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators

January 1, 2001
Author(s)
Curt A. Richter, Allen R. Hefner Jr., Eric M. Vogel
We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have similar

Electron Attachment Cross Sections and Negative Ion States of SF6

January 1, 2001
Author(s)
Loucas G. Christophorou, James K. Olthoff
A comprehensive and critical assessment of published data on the total, dissociative, and nondissociative electron attachment cross sections for SF 6 allowed us to recommend or suggest room temperature values for these cross sections over an energy range

Electron Interactions with c-C 4 F 8

January 1, 2001
Author(s)
Loucas G. Christophorou, James K. Olthoff
The limited electron collision cross-section and transport-coefficient data for the plasma processing gas perfluorocyclobutane (c-C 4F 8) are synthesized, assessed, and discussed. These include cross sections for total electron scattering, differential
Displaying 401 - 425 of 655