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Search Publications

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Displaying 451 - 475 of 718

Optical illumination optimization for patterned defect inspection

April 20, 2011
Author(s)
Bryan M. Barnes, Richard Quintanilha, Martin Y. Sohn, Hui Zhou, Richard M. Silver
Rapidly decreasing critical dimensions (CD) for semiconductor devices drive the study of improved methods for the detection of defects within patterned areas. As reduced CDs are being achieved through directional patterning, additional constraints and

Fast and robust quantum computation with Wigner crystals of ions

April 15, 2011
Author(s)
J D. Baltrusch, A Negretti, T Calarco, Jacob Taylor
We present a detailed analysis of the modulated-carrier quantum phase gate implemented with Wigner crystals of ions confined in Penning traps. We elaborate on a recent scheme, proposed by two of us, to engineer two-body interactions between ions in such

A new interface defect spectroscopy method

April 13, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Jason P. Campbell, Fei Zhang, Chen Wang, John S. Suehle, Vinny Tilak, Jody Fronheiser

Photoemission Threshold Spectroscopy: MOS Band alignments

April 7, 2011
Author(s)
Nhan V. Nguyen
In this talk I will 1) briefly review SED’s history of the optical thin metrology project, 2) describe the principle of internal photoemission (IPE) and the applications to determine the band alignments of metal-oxide-semiconductor structures, and 3)

Test Structure Fundamentals

April 4, 2011
Author(s)
Richard A. Allen
Test structures are critical tools for semiconductor manufacturers, allowing for understanding of the process and individual circuit elements that cannot be acquired from measurements of the circuits, which can have billions of transistors and other

Quantification and Compensation of Unintentional Analyte Aggregation in Electrospray Sampling

March 30, 2011
Author(s)
Mingdong M. Li, Suvajyoti S. Guha, Rebecca A. Zangmeister, Michael J. Tarlov, Michael R. Zachariah
Electrospray (ES) sources are commonly used to introduce non-volatile materials (e.g. nanoparticles, proteins, etc.) in to the gas phase for characterization by mass spectrometry and ion mobility. Recent studies in our group using electrospray ion mobility

Optics contamination studies in support of high-throughput EUV lithography tools

March 25, 2011
Author(s)
Shannon B. Hill, Fardina Asikin, Lee J. Richter, Steven E. Grantham, Charles S. Tarrio, Thomas B. Lucatorto, Sergiy Yulin, Mark Schurmann, Viatcheslav Nesterenko, Torsten Feigl
We report on optics contamination rates induced by exposure to broad-bandwidth, high-intensity EUV radiation peaked near 8 nm in a new beamline at the NIST synchrotron. The peak intensity of 50 mW/mm2 allows extension of previous investigations of

Intensity Dynamics in a Waveguide Array Laser

February 15, 2011
Author(s)
Kevin L. Silverman, Mingming M. Feng, Richard P. Mirin, Steven T. Cundiff, Matt Williams, J. Nathan N. Kutz
We consider experimentally and theoretically the optical field dynamics of a five emitter laser array subject to a linearly decreasing injection current. We have achieved experimentally an array that produces a robust oscillatory power output with a nearly

The Case for Innovations in Photovoltaics: the Nonmaterial Edge

January 26, 2011
Author(s)
Yaw S. Obeng, Kathleen C. Richardson
The limitations of current thin film and the gaps to cost efficient photovoltaic (PV) cells will be discussed in the presentation. This discussion will suggest ways to improve PV cell performance through the use of reduced dimension materials (e.g

Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors

January 3, 2011
Author(s)
Jason P. Campbell, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, Kuang Sheng, A Oates
Geometric magnetoresistance provides a promising solution to the difficult challenges associated with channel mobility extraction in nano-scale transistors. However, this technique requires significant experimental considerations which are uncommon in most

Analysis of high-Q, gallium nitride nanowire resonators in response to deposited thin films

January 1, 2011
Author(s)
J. R. Montague, M. Dalberth, J. M. Gray, D. Seghete, Kristine A. Bertness, S M. George, Victor M. Bright, Charles T. Rogers, Norman Sanford
Gallium nitride nanowires (GaN-NWs) are systems of interest for mechanical resonance-based sensors due to their small mass and, in the case of c-axis NWs, high mechanical quality (Q) factors of 10,000-100,000. We report on singly-clamped NW mechanical

Effects of Polymeric Nanogratings on Cell Orientation

December 30, 2010
Author(s)
Nancy J. Lin, Sheng Lin-Gibson, Jirun Sun, Yifu Ding
Surface topography is known to play a critical role in the biological response to materials, with surface features on the order of both microns and nanometers altering cell response, including morphology, adhesion, cytoskeletal orientation, and gene

Zone-Refinement Effect in Small Molecule-Polymer Blend Semiconductors for Organic Thin Film Transistors

December 14, 2010
Author(s)
Yeon Sook Chung, Nayool Shin, Jihoon Kang, Youngeun Jo, Vivek Prabhu, Regis J. Kline, John E. Anthony, Do Y. Yoon
The blend films of small molecule semiconductors with insulating polymers exhibit not only an excellent solution processability, but also superior performance characteristics (field-effect mobility, on/off ratio, threshold voltage and stability) over those

US Anti-Counterfeiting Standards Development Activities: An Overview

December 1, 2010
Author(s)
Yaw S. Obeng, Eric D. Simmon, YaShian Li-Baboud
Counterfeit electronics components impact performance, hence can be viewed as a reliability concern. Several different strategies have been proposed to mitigate the penetration and impact of counterfeits on the supply chain. Standards afford effective

Low temperature transport properties and heat capacity of single-crystal Na8Si46

November 17, 2010
Author(s)
Stevce Stefanoski, Joshua B. Martin, George S. Nolas
The low temperature thermal conductivity, resistivity, and Seebeck coefficient of single-crystal Na8Si46 are investigated revealing the intrinsic low temperature transport properties of this material. Metallic conduction is observed, with a higher residual

Thickness dependence of the elastic modulus of tri (8-hydroxyquinolinato) aluminum (III)

November 2, 2010
Author(s)
Jessica M. Torres, Nathan Bakken, Christopher Stafford, Jian Li, Bryan D. Vogt
The intrinsic flexibility of organic molecules has been suggested to enable bendable electronics in comparison to their stiffer, inorganic counterparts. However, very little is known regarding the mechanical properties of these conjugated molecular glasses
Displaying 451 - 475 of 718