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Displaying 476 - 500 of 718

Characterization of a Soluble Anthradithiophene Derivative

October 1, 2010
Author(s)
Brad Conrad, Calvin Chan, Marsha A. Loth, Sean R. Parkin, Xinran Zhang, John E. Anthony, David J. Gundlach
The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to readily

Intercomparison of Methods for Detecting and Characterizing Voids in Bonded Wafer Pairs

October 1, 2010
Author(s)
Richard A. Allen, Andrew C. Rudack, David T. Read, Winthrop A. Baylies
The Wafer Bond Task Force of the SEMI MEMS Standards Committee has begun a round robin experiment to evaluate methods for identifying and characterizing voids in bonded wafer pairs for three-dimensional integrated circuit (3D IC) applications. Due to the

Defect depth profiling in gate dielectrics

September 29, 2010
Author(s)
Kin P. Cheung
Defects in gate dielectric greatly impact the performance and reliability of advanced MOSFETs. The introduction of high-k/metal gate technology makes the characterization of defects much more important and urgent. There are a limited number of methods

Spatial Coherence in Electron-Beam Patterning

September 27, 2010
Author(s)
Ginusha M. Perera, Gila E. Stein, James Alexander Liddle
We demonstrate a simple method to identify noise sources in electron-beam systems and accurately quantify the resulting errors in feature placement. Line gratings with a 46 nm average pitch were patterned with electron-beam lithography (EBL) and measured

Reliability Issues of SiC MOSFETs: A Technology for High Temperature Environments

September 20, 2010
Author(s)
Liangchun (. Yu, Greg Dunne, Kevin Matocha, Kin P. Cheung, John S. Suehle, Kuang Sheng
The wide-bandgap nature of silicon carbide (SiC) makes it an excellent candidate for applications where high temperature is required. The MOS-controlled power devices are the most favorable structure, however, it is widely believed that silicon oxide on

Separation and Metrology of Nanoparticles by Nanofluidic Size Exclusion

August 11, 2010
Author(s)
Samuel M. Stavis, Jon C. Geist, Michael Gaitan
A nanofluidic approach to the separation and metrology of nanoparticles is demonstrated. Advantages of this approach include nanometer-scale resolution, nanometer-scale to submicrometer-scale range, mitigation of hydrodynamic and diffusional limitations to

Conductive Carbon Nanotubes for Semiconductor Metrology

August 10, 2010
Author(s)
Joseph J. Kopanski, Victor H. Vartanian, Vladimir Mancevski, Phillip D. Rack, Ilona Sitnitsky, Matthew D. Bresin
This paper presents an evaluation of e-beam assisted deposition and welding of conductive carbon nanotube (c-CNT) tips for electrical scanning probe microscope measurements. Variations in CNT tip conductivity and contact resistance during fabrication were

Friction and Wear in Micro and Nanomachines

August 2, 2010
Author(s)
Maarten P. de Boer, Alex D. Corwin, Frank W. DelRio, W R. Ashurst
Friction and wear present both challenges and opportunities for micro- and nanosystems. In the sections that follow, we will describe theoretical underpinnings of multi-asperity friction, micromachined test structures to measure friction, and monolayer

Semiconductor Microelectronics and Nanoelectronics Programs

July 1, 2010
Author(s)
Joaquin (. Martinez, Yaw S. Obeng, Michele L. Buckley
The microelectronics industry supplies vital components to the electronics industry and to the U.S. economy, enabling repaid improvements in productivity and in new high technology growth industries such as electronic commerce and biotechnology. The

Measurement of residual stress field anisotropy at indentations in silicon

June 23, 2010
Author(s)
Yvonne B. Gerbig, Stephan J. Stranick, Robert F. Cook
The residual stress field around spherical indentations on single crystal silicon (Si) of different crystallographic orientation is mapped by confocal Raman microscopy. All orientations exhibit an anisotropic stress pattern with an orientation specific

Interlaboratory Comparison of Traceable Atomic Force Microscope Pitch Measurements

June 14, 2010
Author(s)
Ronald G. Dixson, Donald Chernoff, Shihua Wang, Theodore V. Vorburger, Ndubuisi G. Orji, Siew-Leng Tan, Joseph Fu
The National Institute of Standards and Technology (NIST), Advanced Surface Microscopy (ASM), and the National Metrology Centre (NMC) of the Agency for Science, Technology, and Research (A*STAR) in Singapore have undertaken a three-way interlaboratory

Gate Dielectrics Year-In-Review

May 3, 2010
Author(s)
Jason P. Campbell
The gate dielectrics year-in-review includes a comprehensive examination of the past year s reports which detail gate stack reliability issues and the corresponding physical mechanisms which limit the performance and lifetimes of advanced devices. The

NBTI: Confusion, Frustration, and Promise?

May 2, 2010
Author(s)
Jason P. Campbell
The negative-bias temperature instability (NBTI) is a reliability problem that, in the last ten years, has risen from relative obscurity to become the most important reliability problem in advanced pMOSFET devices. Even though a significant effort has been

Prediction of Collagen and Glycosaminoglycan Content by Acoustic Microscopy

April 21, 2010
Author(s)
Jenni R. Popp, Colm Flannery, Tammy L. Oreskovic, Jennifer Recknor, Kristi S. Anseth, Timothy P. Quinn
Functional tissue engineering of articular cartilage is rapidly advancing as a technique to develop regenerative and reparative treatments for cartilage degeneration and osteoarthritis. Tissue engineered constructs are often developed using a combination

Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages

April 18, 2010
Author(s)
J. J. Brown, A. I. Baca, Kristine A. Bertness, D. A. Dikin, R. S. Ruoff, Victor M. Bright
This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structures
Displaying 476 - 500 of 718