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Displaying 526 - 550 of 718

Enhanced Mass Transport in Ultra-Rapidly-Heated Ni/Si Thin-Film Multilayers

November 15, 2009
Author(s)
Lawrence P. Cook, Richard E. Cavicchi, Nabil Bassim, Susie Eustis, Winnie Wong-Ng, Igor Levin, Ursula R. Kattner, Carelyn E. Campbell, Christopher B. Montgomery, William F. Egelhoff Jr., Mark D. Vaudin
We have investigated multilayer and bilayer Ni/Si thin films by nano-differential scanning calorimetry (DSC) at ultra rapid scan rates, in a temperature-time regime not accessible with conventional apparatus. DSC experiments were completed at slower scan

Measurement of heat capacity and enthalpy of formation of Nickel Silicide using Nano-calorimetry

November 2, 2009
Author(s)
Ravi Kummamuru, Lito De La Rama, Liang Hu, Mark D. Vaudin, Mikhail Efremov, Martin L. Green, David A. LaVan, Leslie Allen
We present characterization of energetics of the reaction between nickel and silicon thin films using differential scanning nano-calorimetry (nano-DSC). For the first time, nano-DSC measurements up to 850 °C and of enthalpy of thin film reactions have been

NIST High Resolution X-Ray Diffraction Standard Reference Material: SRM 2000

October 30, 2009
Author(s)
Donald A. Windover, David L. Gil, Albert Henins, James P. Cline
NIST recently released a standard reference material (SRM) for the calibration of high resolution X-ray diffraction (HRXRD) instruments. HRXRD is extensively used in the characterization of lattice distortion in thin single, epitaxial crystal layers on

Phosphorus Doping of Silicon at Substrate Temperatures Above 600 degC

October 22, 2009
Author(s)
P.E. Thompson, G.G. Jernigan, David S. Simons, P. Chi, B.T. Jonker, O.M.J. van 't Erve
P doping of Si during growth by molecular beam epitaxy (MBE) has been investigated in the temperature regime 700 oC to 870 oC. By designing a growth sequence that fully accounts for the P deposited in a delta-doped layer, and then tracks the P as it

A Fast, Simple Wafer-level Hall-Mobility Measurement Technique

October 21, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, Kuang Sheng
Mobility is a good indicator of device reliability. High channel mobility is one of the biggest challenges especially in novel devices such as high-k based MOSFET, III-V devices and SiC power MOSFET etc. Accurate measurement of channel mobility is required

Effects of sample preparation on bacterial colonization of polymers

October 19, 2009
Author(s)
Diana N. Zeiger, Christopher Stafford, Yajun Cheng, Stefan D. Leigh, Sheng Lin-Gibson, Nancy Lin
Characterization of materials developed for medical usage frequently includes studies in which the materials are inoculated with bacteria in order to assess biofilm formation. Differences in the bacteria are considered to be due to the material alone; the

Optical Properties of Semiconductors

October 19, 2009
Author(s)
David G. Seiler, Stefan Zollner, Alain C. Diebold, Paul Amirtharaj
Rapid advances in semiconductor manufacturing and associated technologies have increased the need for optical characterization techniques for materials analysis and in-situ monitoring/control applications. Optical measurements have many unique and

Wafer-level Hall Measurement on SiC MOSFET

October 16, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, John S. Suehle, Kuang Sheng
Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for understanding the mechanisms that lead to low mobility. The most widely used effective mobility measurements overestimate

Relative Photon-to-Carrier Efficiencies of Alternating Nanolayers of Zinc Phthalocyanine and C60 Multilayer Films Assessed by Time-Resolved Terahertz Spectroscopy

October 1, 2009
Author(s)
Okan Esenturk, Joseph S. Melinger, Paul A. Lane, Edwin J. Heilweil
Alternating multi-layer and 1:1 blended films of zinc phthalocyanine (ZnPc)and buckminsterfullerene (C60) were investigated as model active layers for solar cells by Time-Resolved Terahertz Spectroscopy (TRTS). Relative photon-to-carrier efficiencies 2

Photomask metrology using a 193 nm scatterfield microscope

September 30, 2009
Author(s)
Richard Quintanilha, Bryan M. Barnes, Martin Y. Sohn, Lowell P. Howard, Richard M. Silver, James E. Potzick, Michael T. Stocker
The current photomask linewidth Standard Reference Material (SRM) supplied by the National Institute of Standards and Technology (NIST), SRM 2059, is the fifth generation of such standards for mask metrology. The calibration of this mask has been usually

Unified Model for Bulk Acoustic Wave Resonators’ Nonlinear Effects

September 20, 2009
Author(s)
Eduard Rocas, Juan C. Collado Gomez, James C. Booth, Enrique Iborra, Robert Aigner
We present a nonlinear model for Bulk Acoustic Wave resonators that combines different sources of nonlinearity, using device-independent material specific parameters, to predict the intermodulation and harmonics generation. The actual model accounts for

Formation of Silicon-Based Molecular Electronic Structures Using Flip-chip Lamination

August 11, 2009
Author(s)
Mariona Coll Bau, Lauren H. Miller, Lee J. Richter, Daniel R. Hines, Curt A. Richter, Christina A. Hacker
The use of organic molecules to impart electrical surface properties has been a subject of intense research not only from a fundamental perspective but for many technological applications. In particular, organic molecules have been proposed as active

Development of a Seebeck Coefficient Standard Reference Material

August 7, 2009
Author(s)
Nathan Lowhorn, Winnie Wong-Ng, John Lu, Evan L. Thomas, Makoto Otani, Martin L. Green, Neil Dilley, Jeffrey Sharp, Thanh N. Tran
We have successfully developed a Seebeck coefficient Standard Reference Material (SRM ), Bi2Te3, that is crucial for interlaboratory data comparison and for instrument calibration. Certification measurements were performed using two different techniques on

Effects of Polymorphism on Charge Transport in Organic Semiconductors

August 3, 2009
Author(s)
Oana Jurchescu, M. Devin, Sankar Subramanian, Sean R. Parkin, Brandon Vogel, John E. Anthony, Thomas Jackson, David J. Gundlach
The increasing interest in fluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene (diF TES ADT) is motivated by the demonstrated high performance field-effect transistors and circuits based on this material, complemented by reduced complexity

Nanoscale Measurements with a Through-Focus Scanning-Optical-Microscope

July 15, 2009
Author(s)
Ravikiran Attota, Richard M. Silver, Thomas A. Germer
We present a novel optical technique that produces nanometer dimensional measurement sensitivity using a conventional optical microscope, by analyzing through-focus scanning-optical-microscope (TSOM) images obtained at different focus positions. In

Semiconductor Microelectronics and Nanoelectronics Programs

July 13, 2009
Author(s)
Joaquin (. Martinez, Yaw S. Obeng, Michele L. Buckley
The microelectronics industry supplies vital components to the electronics industry and to the U.S. economy, enabling repaid improvements in productivity and in new high technology growth industries such as electronic commerce and biotechnology. The
Displaying 526 - 550 of 718