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Displaying 551 - 575 of 718

EBSD Analysis of Narrow Damascene Copper Lines

May 11, 2009
Author(s)
Roy H. Geiss, David T. Read, Glenn Alers, Rebekah L. Graham
Orientation imaging microscopy (OIM) by electron back scatter diffraction (EBSD) has been used to examine grain size and crystallographic orientations of damascene Cu lines nominally 25 nm to 55 nm in width and 100 nm thick. These are the smallest

Random Telegraph Noise in Highly Scaled nMOSFETs

April 26, 2009
Author(s)
Jason P. Campbell, Jin Qin, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, A Oates, Kuang Sheng
Recently 1/f and random telegraph noise (RTN) studies have been used to infer information about bulk dielectric defects' spatial and energetic distributions. These analyses rely on a noise framework which involves charge exchange between the inversion

Indentation of Single-Crystal Silicon Nanolines: Buckling and Contact Friction at Nanoscale

April 8, 2009
Author(s)
Bin Li, Qiu Zhao, Huai Huang, Zhiquan Luo, Jay Im, Michael W. Cresswell, Richard A. Allen, Min K. Kang, Rui Huang, Paul S. Ho
Silicon nanostructures are essential building blocks for nanoelectronic devices and nano-electromechanical systems (NEMS). Mechanical characterization at nanoscale is important for practical applications but remains challenging as the mechanical properties

Ultrasmooth Gold as a Top Metal Electrode for Molecular Electronic Devices

April 7, 2009
Author(s)
Mariona Coll Bau, Christina A. Hacker, Lauren H. Miller, Daniel R. Hines, E. C. Williams, Curt A. Richter
In the emerging area of molecular electronics, fabrication of reliable metallic contacts remains one of the most critical challenges. Nanotransfer printing (nTP) is an attractive low-cost non-destructive technique to provide contact to organic monolayers

EEEL Technical Accomplishments

March 30, 2009
Author(s)
Erik M. Secula
This document describes the technical work of the Electronics and Electrical Engineering Laboratory. In this report, you will find that EEEL researchers are developing the world's most advanced sensors, providing advanced gamma ray imagers for astronomical

Test Chip to Evaluate Measurement Methods for Small Capacitances

March 30, 2009
Author(s)
Joseph J. Kopanski, Muhammad Y. Afridi, Chong Jiang, Curt A. Richter
We designed and fabricated a test chip to help us evaluate the performance of new approaches to measurement of small capacitances (femto-Farads to atto-Farads range). The test chip consists of an array of metal-oxide-semiconductor capacitors, metal

Small Angle X-Ray Scattering Measurements of Spatial Dependent Linewidth in Dense Nanoline Gratings

March 16, 2009
Author(s)
Chengqing C. Wang, Wei-En Fu, Bin Li, Huai Huang, Christopher Soles, Eric K. Lin, Wen-Li Wu, Paul S. Ho, Michael W. Cresswell
Small angle X-ray scattering (SAXS) was used to characterize the line cross section of nanoline gratings fabricated using electron beam lithography (EBL) patterning followed by anisotropic wet etching into silicon single crystal. SAXS results at normal

Channel Hot-Carrier Effect of 4H-SiC MOSFET

March 2, 2009
Author(s)
Liangchun (. Yu, Kin P. Cheung, John S. Suehle, Jason P. Campbell, Kuang Sheng, Aivars Lelis, Sei-Hyung Ryu
SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high

Controlled Formation and Resistivity Scaling of Nickel Silicide Nanolines

February 25, 2009
Author(s)
Bin Li, Zhiquan Luo, Paul S. Ho, Li Shi, Lew Rabenberg, JiPing Zhou, Richard A. Allen, Michael W. Cresswell
We demonstrate a top-down method to fabricate nickel mono-silicide (NiSi) nanolines with smooth side walls and linewidths down to 15 nm. Four probe electrical measurements revealed that the electrical resistivity at room temperature remained constant as

Comparison of Measurement Techniques for Linewidth Metrology on Advanced Photomasks

February 19, 2009
Author(s)
Stewart Smith, Andreas Tsiamis, Martin McCallum, Andrew Hourd, J Stevenson, Anthony Walton, Ronald G. Dixson, Richard A. Allen, James E. Potzick, Michael W. Cresswell, Ndubuisi George Orji
This paper compares electrical, optical, and atomic force microscope (AFM) measurements of critical dimension (CD)made on a chrome on quartz photomask. Test structures suitable for direct, on-mask electrical probing have been measured using the above three

The molecular basis of mesophase ordering in a thiophene-based copolymer

February 18, 2009
Author(s)
Dean M. DeLongchamp, Regis J. Kline, Youngsuk Jung, Eric K. Lin, Daniel A. Fischer, David J. Gundlach, Andrew Moad, Lee J. Richter, Michael F. Toney, Martin Heeney, Iain McCulloch
The carrier mobility of poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-b]thiophene) semiconductors can be substantially enhanced after heating through a thermotropic mesophase transition, which causes a significant improvement in thin film structural order

Wear-out and Time Dependent Dielectric Breakdown in Silicon Oxides

January 14, 2009
Author(s)
John S. Suehle
This chapter will discuss the various physical mechanisms proposed for defect generation and dielectric breakdown in thin silicon dioxide films. Current understanding of the driving forces for defect generation will be presented as well as statistical

Local Structure of Cu in Cs8Na16Cu5Ge131 Type II Clathrate

January 8, 2009
Author(s)
Winnie K. Wong-Ng, Azzam Mansour, Matthew Beekman, George S. Nolas
We have used X-ray absorption spectroscopy (XAS) to investigate the local structure of Cu and Ge in the Cs8Na16Cu5Ge131 type II clathrate. We show that the local structure parameters, coordination number, and distances for Ge are consistent with those

A Standard Method for Measuring Wafer Bond Strength for MEMS Applications

December 23, 2008
Author(s)
Richard A. Allen, Janet M. Cassard, Winthrop A. Baylies, David T. Read, George D. Quinn, Frank W. DelRio, Kevin T. Turner, Michael Bernasch, Joerg Bagdahn
A round robin, to provide precision and bias data for SEMI standard MS5-1107, Test Method for Wafer Bond Strength Measurements Using Micro-Chevron Test Structures, in underway. The precision and bias data, combined with experience in applying the test
Displaying 551 - 575 of 718