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Displaying 576 - 600 of 718

Silicon Nanowire NVM Cell Using High-k Dielectric Charge Storage Layer

December 5, 2008
Author(s)
Xiaoxiao Zhu, Yang Yang, Qiliang Li, D. E. Ioannou, John S. Suehle, Curt A. Richter
Si nanowire (SiNW) channel non-volatile memory (NVM) cells were fabricated by a 'self-alignment' process. First, a layer of thermal SiO2 was grown on a silicon wafer by dry oxidation, and the SiNWs were then grown by chemical vapor deposition in pre

Raman Spectroscopic Determination of Electron Concentration in n-Type GaSb

November 19, 2008
Author(s)
James E. Maslar, Wilbur S. Hurst, C Wang
Phonon-plasmon coupled mode Raman spectra of n-type GaSb were measured at room temperature as a function of electron concentration. These spectra were obtained using an optical system based on 752.55 nm excitation. Utilization of this wavelength permits

Extraction of Sheet Resistance and Line Width from All-Copper ECD Test Structures Fabricated from Silicon Preforms

November 3, 2008
Author(s)
Byron J. Shulver, Andrew S. Bunting, Alan Gundlach, Les I. Haworth, Alan W. Ross, Stewart Smith, Anthony J. Snell, J. T. Stevenson, Anthony Walton, Richard A. Allen, Michael W. Cresswell
Test structures have been fabricated to allow Electrical Critical Dimensions (ECD) to be extracted from copper features with dimensions comparable to those replicated in IC interconnect systems. The implementation of these structures is such that no

Organic single crystal field-effect transistors of a soluble anthradithiophene

October 22, 2008
Author(s)
Oana Jurchescu, Sankar Subramanian, R J. Kline, Steven D. Hudson, John E. Anthony, Thomas Jackson, David J. Gundlach
We use single crystals (grown by physical vapor transport) of a soluble oligomer to obtain a better understanding of the intrinsic properties, limitations and potential of these materials. Single crystals are well-suited for studies exploring the effects

The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs

October 17, 2008
Author(s)
Jason P. Campbell, Jin Qin, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, A Oates, Kuang Sheng
Random telegraph noise (RTN) has recently become an important issue in advanced circuit performance. It has also recently been used as a tool for gate dielectric defect profiling. In this work, we show that the widely accepted model thought to govern RTN

The transient behavior of NBTI - A new prospective

October 17, 2008
Author(s)
Kin P. Cheung, Jason P. Campbell
The Negative-Bias-Temperature-Instability (NBTI) is currently one of the most serious reliability issues in advanced CMOS technology. Specifically, the fast recovery of NBTI degradation immediately after stress is removed has recently become a hot topic

Oxide Reliability of SiC MOS Devices

October 12, 2008
Author(s)
Liangchun (. Yu, Kin P. Cheung, Jason P. Campbell, John S. Suehle, Kuang Sheng
Silicon carbide possesses excellent material properties for high temperature, high frequency and high power applications. Among all the device structures, MOSFET has advantages such as low gate leakage current, easier device control etc., and therefore

An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices

September 1, 2008
Author(s)
Yun Wang, Kin P. Cheung, Y.J. Choi, Byoung Hun Lee
Accurate CV measurement becomes extremely difficult in advanced CMOS technology due to high level of leakage across the gate dielectric. Recently, a new Time-Domain-Reflectometry (TDR) based CV measurement method was introduced. This new method offers ease

Improved Performance of Schottky Diodes on Pendeo-Epitaxial Gallium Nitride

September 1, 2008
Author(s)
Lawrence H. Robins, T Zheleva, M Derenge, D Ewing, P Shah, K Jones, U Lee
We designed experiments to investigate the role of the dislocation density on the performance of Schottky diodes fabricated on GaN material grown conventionally and by pendeo-epitaxy. Devices of varying geometries were fabricated on the low defect density

Power Conditioning System Technologies for High-Megawatt Fuel Cell Plants

August 7, 2008
Author(s)
Allen R. Hefner Jr.
High-megawatt Power Conditioning Systems (PCSs) are required to convert the low-voltage produced by fuel cell modules in central station scale plants to the very much higher voltage levels required for delivery to the grid. As part of a NIST/DOE

Recommended Terminology For Microwave Radiometry

August 1, 2008
Author(s)
James P. Randa, Janne Lahtinen, Adriano Camps, A. Gasiewski, Martti Hallikainen, David Leine V, Manuel Martin-Neira, Jeff Piepmeier, Philip Rosenkranz, Christopher Ruf, James Shiue, Niels Skou
We present recommended definitions for common terms in microwave remote-sensing radiometry. Terms are grouped into three chapters: General Terminology, Real-Aperture Radiometers, and Polarimetric Radiometry. AN alphabetical index lists the terms that are

Negative-Bias Temperature Instability Induced Electron Trapping

July 21, 2008
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
Despite four decades of research, the physics responsible for the negative bias temperature instability (NBTI) in p-channel metal-oxide-silicon field-effect-transistors is still unresolved. The current NBTI debate focuses on the dominance of either a hole

Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications

June 17, 2008
Author(s)
Jason P. Campbell, Kin P. Cheung, John S. Suehle, A Oates
We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and electron

Evidence for an Indirect Gap in B-FeSi2 Epilayers by Photoreflectance Spectroscopy

May 27, 2008
Author(s)
Anthony Birdwell, Christopher Littler, R Glosser, M Rebien, W Henrion, P Stauss, G Behr
Photoreflectance spectra obtained from epitaxial films of semiconducting Β-FeSi2 exhibit complex line shapes resulting from a variety of optical transitions. While we have previously established a direct gap at 0.934{plus or minus}0.002 eV at 75 K, we find

Combinatorial study of the crystallinity boundary in the HfO2-TiO2-Y2O3 system using pulsed laser deposition library thin films

May 16, 2008
Author(s)
Peter K. Schenck, Jennifer L. Klamo, Nabil Bassim, Peter G. Burke, Yvonne B. Gerbig, Martin L. Green
HfO2-TiO2-Y2O3 is an interesting high-k dielectric system. Combinatorial library films of this system enable the study of the role of composition on phase formation as well as optical and mechanical properties. A library film of this system deposited at

The relationship between local order, long range order, and sub-bandgap defects in hafnium oxide and hafnium silicate films

May 9, 2008
Author(s)
D. H. Hill, Robert A. Bartynski, Nhan Van Nguyen, Albert Davydov, Deane Chandler-Horowitz, Martin M. Frank
We have measured X-ray absorption spectra (XAS) at the oxygen K-edge for hafnium oxide (HfO2) films grown by chemical vapor deposition (CVD) and atomic layer deposition (ALD), as well as hafnium silicate (HfSiO) films grown by CVD.  The XAS results are

Investigation of Electron Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers

May 8, 2008
Author(s)
Yi Chen, Ning Zhang, M Dudley, JOSHUA CALDWELL, Kendrick Liu, ROBERT STAHLBUSH, XIANRONG HUANG, A T. Macrander, David R. Black
Electron hole recombination-activated partial dislocations in 4H silicon carbide homoepitaxial layers and their behavior have been studied using synchrotron X-ray topography and electroluminescence. Stacking faults whose expansion was activated by electron

STRESS-INDUCED DEFECT GENERATION IN HFO2/SIO2 STACKS OBSERVED BY USING CHARGE PUMPING AND LOW FREQUENCY NOISE MEASUREMENTS

April 30, 2008
Author(s)
Hao Xiong, Dawei Heh, Shuo Yang, Moshe Gurfinkel, Gennadi Bersuker, D. E. Ioannou, Curt A. Richter, Kin P. Cheung, John S. Suehle
A novel approach combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO2 layer and high-k layer in the n-type MOSFETs with HfO2/SiO2
Displaying 576 - 600 of 718